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M471B5674EB0-YK0 - Samsung 2GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 204-Pin SoDimm 1.35V Low Voltage Single Rank Memory Module
- Laptop 2 GB DDR3
- 204-pin SO-DIMM 1 x 2 GB
- CAS latency: 11
- 1.35 V
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Key specifications
See full specs ↓- CAS latency
- 11
- Internal memory
- 2 GB
- Memory layout (modules x size)
- 1 x 2 GB
- Internal memory type
- DDR3
- Memory clock speed
- 1600 MHz
- Component for
- Laptop
Documents
Product details
Samsung 2GB DDR3. Component for: Laptop, Internal memory: 2 GB, Memory layout (modules x size): 1 x 2 GB, Internal memory type: DDR3, Memory clock speed: 1600 MHz, Memory form factor: 204-pin SO-DIMM, CAS latency: 11
Features
| CAS latency | 11 |
| Internal memory | 2 GB |
| Memory layout (modules x size) | 1 x 2 GB |
| Internal memory type | DDR3 |
| Memory clock speed | 1600 MHz |
| Component for | Laptop |
| Memory form factor | 204-pin SO-DIMM |
| Memory voltage | 1.35 V |
Weight & dimensions
| Height | 30 mm |
Description
High-performance hardware node designed for mission-critical infrastructure. Engineered to deliver exceptional throughput and reliability across enterprise clusters.
Condition: Refurbished
Free U.S. ground shipping
Typically 1–2 days handling, 3–7 days in transit.
Purchase orders accepted
Government, enterprise, data center and small business.
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