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M471B5273EB0-CK0 - Samsung 4GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 204-Pin SoDimm Dual Rank Memory Module
- Smaller than normal DIMMs
- Supports x8 / x16 / up to 2 ranks per DIMM and 2DPC configuration
- For systems with limited space issues
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Key specifications
See full specs ↓- CAS latency
- 11
- Internal memory
- 4 GB
- Memory layout (modules x size)
- 1 x 8 GB
- Internal memory type
- DDR3
- Memory clock speed
- 1600 MHz
- Component for
- Laptop
Product details
Samsung M471B5273EB0-CK0. Component for: Laptop, Internal memory: 4 GB, Memory layout (modules x size): 1 x 8 GB, Internal memory type: DDR3, Memory clock speed: 1600 MHz, Memory form factor: 204-pin SO-DIMM, CAS latency: 11
Features
| CAS latency | 11 |
| Internal memory | 4 GB |
| Memory layout (modules x size) | 1 x 8 GB |
| Internal memory type | DDR3 |
| Memory clock speed | 1600 MHz |
| Component for | Laptop |
| Memory form factor | 204-pin SO-DIMM |
| Memory ranking | 2 |
| Memory voltage | 1.35,1.5 V |
| Module configuration | 256M x 8 |
Description
Samsung’s memory modules are designed for a wide range of applications to deliver the best performance with low power requirements.
Condition: Refurbished
Free U.S. ground shipping
Typically 1–2 days handling, 3–7 days in transit.
Purchase orders accepted
Government, enterprise, data center and small business.
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