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M471B1G73AH0-CH9 - Samsung 8GB DDR3-1333MHz PC3-10600 non-ECC Unbuffered CL9 204-Pin SoDimm Dual Rank Memory Module
- Laptop 8 GB DDR3
- 204-pin SO-DIMM 2 x 4 GB
- CAS latency: 9
- 1.5 V
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Key specifications
See full specs ↓- CAS latency
- 9
- Internal memory
- 8 GB
- Memory layout (modules x size)
- 2 x 4 GB
- Internal memory type
- DDR3
- Memory clock speed
- 1333 MHz
- Component for
- Laptop
Product details
Samsung DDR3 8GB, PC-1333. Component for: Laptop, Internal memory: 8 GB, Memory layout (modules x size): 2 x 4 GB, Internal memory type: DDR3, Memory clock speed: 1333 MHz, Memory form factor: 204-pin SO-DIMM, CAS latency: 9
Features
| CAS latency | 9 |
| Internal memory | 8 GB |
| Memory layout (modules x size) | 2 x 4 GB |
| Internal memory type | DDR3 |
| Memory clock speed | 1333 MHz |
| Component for | Laptop |
| Memory form factor | 204-pin SO-DIMM |
| Memory ranking | 2 |
| Memory voltage | 1.5 V |
| Module configuration | 1024M x 64 |
Packaging data
| Package type | SO-DIMM |
Description
Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM products are found in computers - from ultra-mobile portables to powerful servers - and in a wide range of handheld devices such as smartphones and MP3 players. Samsung also delivers the industry’s widest line of storage products. These include optical and hard disk drives as well as flash storage, such as the all-flash Solid State Drive and a range of embedded and removable flash storage products.
Condition: Refurbished
Free U.S. ground shipping
Typically 1–2 days handling, 3–7 days in transit.
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Government, enterprise, data center and small business.
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