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M471A1K43CB1-CTD - Samsung 8GB DDR4-2666MHz PC4-21300 non-ECC Unbuffered CL19 260-Pin SoDimm 1.2V Single Rank Memory Module

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M471A1K43CB1-CTD - Samsung 8GB DDR4-2666MHz PC4-21300 non-ECC Unbuffered CL19 260-Pin SoDimm 1.2V Single Rank Memory Module

SKU M471A1K43CB1-CTD
Brand Samsung
  • 8GB DDR4 2666MHz SODIMM
  • Improved responsiveness for laptops
  • Optimised for Intel and AMD systems
  • High efficiency and stable output
Available to order

Request a price for M471A1K43CB1-CTD — we confirm current pricing and lead time within one business day.

Key specifications

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CAS latency
19
Internal memory
8 GB
Memory layout (modules x size)
1 x 8 GB
Internal memory type
DDR4
Memory clock speed
2666 MHz
Memory data transfer rate
2666 MT/s

Product details

Samsung M471A1K43CB1-CTD 8GB DDR4 2666MHz PC4-21300 SODIMM. Component for: Laptop, Internal memory: 8 GB, Memory layout (modules x size): 1 x 8 GB, Internal memory type: DDR4, Memory clock speed: 2666 MHz, Memory form factor: 260-pin SO-DIMM, CAS latency: 19, Product colour: Green

Features

CAS latency19
Internal memory8 GB
Memory layout (modules x size)1 x 8 GB
Internal memory typeDDR4
Memory clock speed2666 MHz
Memory data transfer rate2666 MT/s
Component forLaptop
Memory form factor260-pin SO-DIMM
ECCNo
Buffered memory typeUnregistered (unbuffered)
Memory ranking1
Memory voltage1.2 V
Module configuration1024M x 64
Product colourGreen
BacklightNo

Operational conditions

Operating temperature (T-T)0 - 85 °C

Weight & dimensions

Width69.6 mm
Height30 mm

Logistics data

Harmonized System (HS) code84733020

Other features

Country of originSouth Korea

Description

M471A1K43CB1-CTD Samsung 8GB DDR4 2666MHz RAM provides balanced performance and efficiency for modern notebooks and business laptops.

Condition: Refurbished

Free U.S. ground shipping

Typically 1–2 days handling, 3–7 days in transit.

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Government, enterprise, data center and small business.

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