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M391A1K43BB1-CRC - Samsung 8GB DDR4-2400MHz PC4-19200 ECC Unbuffered CL17 288-Pin DIMM 1.2V Single Rank Memory Module

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M391A1K43BB1-CRC - Samsung 8GB DDR4-2400MHz PC4-19200 ECC Unbuffered CL17 288-Pin DIMM 1.2V Single Rank Memory Module

SKU M391A1K43BB1-CRC
Brand Samsung
  • PC/Server 8 GB DDR4
  • 288-pin DIMM 1 x 8 GB
  • CAS latency: 17
  • ECC
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Key specifications

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CAS latency
17
Internal memory
8 GB
Memory layout (modules x size)
1 x 8 GB
Internal memory type
DDR4
Memory clock speed
2400 MHz
Component for
PC/Server

Product details

Samsung M391A1K43BB1-CRC. Component for: PC/Server, Internal memory: 8 GB, Memory layout (modules x size): 1 x 8 GB, Internal memory type: DDR4, Memory clock speed: 2400 MHz, Memory form factor: 288-pin DIMM, CAS latency: 17, ECC

Features

CAS latency17
Internal memory8 GB
Memory layout (modules x size)1 x 8 GB
Internal memory typeDDR4
Memory clock speed2400 MHz
Component forPC/Server
Memory form factor288-pin DIMM
ECCYes
Buffered memory typeUnregistered (unbuffered)
Memory ranking1
Module configuration1024M x 72

Operational conditions

Operating temperature (T-T)0 - 85 °C

Weight & dimensions

Height31.2 mm

Logistics data

Harmonized System (HS) code84733020

Description

Samsung DDR4 Unbuffered DIMMs (or UDIMMs) are the most common type of memory used on desktop systems. A UDIMM memory module does not contain any buffer or additional hardware register between the memory module and the system’s memory controller. UDIMMs also consume much lower power, and have much lower data access latencies than buffered or registered memory. Thus, UDIMMs are an excellent solution for low-cost computing, such as home/personal computing. In addition to Unbuffered DIMM’s features, DDR4 memory is available as Unbuffered DIMM. Samsung DDR4 SDRAM is the new generation of high-performance, power-efficient memory. As the semiconductor memory is widely used in current generation computers, DDR4 is considered the industry standard commercial version of DRAM memory. Advancements in semiconductor design, development, and fabrication processes have enabled the development of high-performance DRAM memory, making the design of devices and applications, such as ultra-thin notebook computers, possible. Progressive developments in DRAM memory have resulted in newer versions operating at lower voltages, resulting in increasing levels of power savings. By leveraging the full potential of Samsung DDR4, you can increase computing performance, while consuming less energy.

Condition: Refurbished

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