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Lenovo 8SSM30E511 8GB DDR4-2133MHz RDIMM 1Rx4 CL15 Memory
- Capacity: 8GB
- Type: DDR4 RDIMM (Registered DIMM)
- Speed: 2133MHz
- Rank: 1Rx4 (Single Rank x4)
- CAS Latency: CL15
- Voltage: Standard DDR4 voltage
- Error Correction: ECC (Error-Correcting Code)
- Form Factor: DIMM
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Product Overview
The Lenovo 8SSM30E511 is a high-performance 8GB DDR4 RDIMM memory module designed for servers and workstations. It operates at a speed of 2133MHz with a CAS latency of 15, offering reliable and efficient data processing capabilities. This module is ideal for upgrading existing systems or building new ones that require robust memory support.
Technical Information
| Memory Type | DDR4 SDRAM |
| Form Factor | RDIMM |
| Capacity | 8 GB |
Additional Specifications
| Speed | 2133 MHz |
| Rank | 1Rx4 |
| CAS Latency | CL15 |
Product Description
This 8GB DDR4 RDIMM from Lenovo, identified by SKU 8SSM30E511, is engineered for enterprise-level computing environments. Its 2133MHz clock speed ensures rapid data transfer, while the RDIMM configuration with ECC support provides enhanced stability and reliability for critical applications. The 1Rx4 organization signifies a single rank with four data bits per chip, optimizing performance for memory-intensive tasks. The module adheres to the DDR4 standard, offering improvements in speed, power efficiency, and density over previous generations. The CL15 CAS latency indicates a relatively low delay between the memory controller requesting data and the data being available, contributing to overall system responsiveness. This makes it a suitable choice for servers, high-performance workstations, and data centers where uptime and data integrity are paramount. As a component designed for professional use, the 8SSM30E511 is built to meet stringent quality and performance standards. Its compatibility with a wide range of server platforms that support DDR4 RDIMMs makes it a versatile upgrade option. The registered nature of the module helps reduce electrical load on the memory controller, allowing for higher memory capacities and improved signal integrity in complex systems.
