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Kingston 9995640-027.A01G 32GB DDR4-2666MHz RDIMM 2Rx4 CL19 Memory
- Capacity: 32GB
- Type: DDR4 SDRAM
- Form Factor: RDIMM
- Speed: 2666MHz
- Rank: 2Rx4
- CAS Latency: CL19
- Voltage: 1.2V
- ECC: Registered ECC
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Product Overview
The Kingston 9995640-027.A01G is a 32GB DDR4 Registered DIMM (RDIMM) memory module operating at 2666MHz. It is designed for servers and workstations requiring high capacity and reliable performance, featuring a 2Rx4 configuration and CL19 latency.
Technical Information
| Memory Type | DDR4 SDRAM |
| Capacity | 32GB |
| Form Factor | RDIMM |
| Speed | 2666MHz |
Additional Specifications
| Rank | 2Rx4 |
| CAS Latency | CL19 |
| Voltage | 1.2V |
| ECC | Registered ECC |
Product Description
This Kingston 32GB DDR4 RDIMM module, identified by SKU 9995640-027.A01G, is built to meet the rigorous demands of server environments. Its 32GB capacity provides ample memory for running multiple virtual machines, handling large datasets, and executing complex applications without performance bottlenecks. The DDR4 standard offers enhanced data transfer rates and improved power efficiency over older DDR generations. The module operates at a frequency of 2666MHz, ensuring rapid data access and processing, which is crucial for applications that require high throughput. The Registered DIMM (RDIMM) architecture includes an on-board register that buffers address and command signals, reducing the electrical load on the memory controller. This feature is essential for system stability, especially when populating multiple memory modules or operating at higher capacities. The 2Rx4 configuration signifies that the memory is dual-ranked with x4 data-wide DRAM chips. This dual-rank design can offer performance advantages by allowing the memory controller to interleave accesses between ranks, effectively increasing bandwidth. With a CAS Latency (CL) of 19, it represents a balance between speed and timing, optimized for the 2666MHz operating frequency. This module is a reliable choice for upgrading or populating servers that require robust and high-capacity memory solutions.


