Safe Checkout
Secure Payments
Fast Delivery
Order Today
Free Shipping
Across the US
Easy Returns
Hassle-Free
Hynix KR1P71-HYB 4GB DDR3-1333MHz ECC Unbuffered CL9 UDIMM 1.35V
- Capacity: 4GB
- Memory Type: DDR3 SDRAM
- Speed: 1333MHz (PC3-10600)
- Form Factor: UDIMM (Unbuffered DIMM)
- ECC: Yes (Error-Correcting Code)
- Voltage: 1.35V (Low Voltage)
- CAS Latency: CL9
- Rank: Single Rank (implied by UDIMM and typical for this capacity)
Click on Inquire to get latest price
Free U.S. Ground Shipping
Typically 1-2 handling + 3-7 transit days
Purchase orders accepted
For government, enterprise, data center, and small business customers.
Bulk Purchase Inquiry
Volume pricing and availability
Product Overview
This Hynix KR1P71-HYB module is a 4GB DDR3 Unbuffered DIMM designed for high-performance computing environments. It operates at a speed of 1333MHz with CL9 timings and a low voltage of 1.35V, making it suitable for servers and workstations requiring reliable memory.
Technical Information
| Memory Type | DDR3 SDRAM |
| Capacity | 4GB |
| Speed | 1333MHz |
| Form Factor | UDIMM |
Additional Specifications
| ECC | Yes |
| Voltage | 1.35V |
| CAS Latency | CL9 |
Product Description
The Hynix KR1P71-HYB is a high-quality 4GB DDR3 Unbuffered DIMM memory module engineered for demanding server and workstation applications. Operating at a frequency of 1333MHz, it provides a substantial bandwidth for data-intensive tasks. The module features Error-Correcting Code (ECC) functionality, which detects and corrects single-bit memory errors, enhancing system stability and data integrity, crucial for mission-critical operations. This UDIMM (Unbuffered DIMM) is designed for systems that do not require registered memory, offering a balance of performance and compatibility. The low operating voltage of 1.35V contributes to reduced power consumption and heat generation, aligning with energy-efficient computing initiatives. With a CAS Latency of CL9, it ensures timely data retrieval, further optimizing system responsiveness. The KR1P71-HYB is an ideal choice for upgrading existing DDR3-compatible systems or for building new ones where reliability and performance are paramount. Its specifications make it suitable for a wide range of applications, including virtualization, database management, and scientific computing, where memory errors can have significant consequences.
