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Hynix HMT42GR7DFR4A-H9T4 16GB DDR3-1333MHz RDIMM 2Rx4 CL9 Memory
- 16GB capacity for substantial memory expansion.
- DDR3 SDRAM technology for efficient data transfer.
- 1333MHz clock speed for good performance.
- RDIMM (Registered DIMM) for enhanced stability and scalability in servers.
- 2Rx4 configuration (Dual Rank, 4 bits per chip) for improved performance.
- CL9 CAS Latency for timely data access.
- Designed for server and workstation environments.
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Key specifications
See full specs ↓- Memory Type
- DDR3 SDRAM
- Capacity
- 16GB
- Form Factor
- RDIMM (240-pin)
- Speed
- 1333MHz (PC3-10600)
- Rank
- 2Rx4 (Dual Rank, x4)
- CAS Latency
- CL9
Product details
The Hynix HMT42GR7DFR4A-H9T4 is a 16GB DDR3 RDIMM memory module operating at 1333MHz. It features a 2Rx4 configuration, indicating dual rank and four bits per chip, and has a CAS Latency of CL9.
Technical Information
| Memory Type | DDR3 SDRAM |
| Capacity | 16GB |
| Form Factor | RDIMM (240-pin) |
| Speed | 1333MHz (PC3-10600) |
Additional Specifications
| Rank | 2Rx4 (Dual Rank, x4) |
| CAS Latency | CL9 |
| Voltage | 1.5V |
Description
The Hynix HMT42GR7DFR4A-H9T4 is a high-performance 16GB DDR3 Registered DIMM (RDIMM) memory module designed to meet the demanding requirements of server and workstation environments. With a substantial capacity of 16GB, this module allows for significant memory expansion, enabling systems to handle larger datasets and more complex applications with greater efficiency. The DDR3 technology provides a robust foundation for fast data processing, operating at a clock speed of 1333MHz, which translates to a theoretical bandwidth of PC3-10600. This module utilizes a 2Rx4 configuration, meaning it is dual-ranked with each memory chip having a 4-bit data width. Dual-rank modules can offer performance advantages in certain server memory controllers by allowing the controller to access different ranks independently, potentially increasing effective bandwidth. The Registered DIMM (RDIMM) design incorporates an onboard register that buffers command and address signals, reducing electrical load on the memory controller and enabling higher memory capacities and improved signal integrity, which is crucial for system stability. Featuring a CAS Latency (CL) of 9, the HMT42GR7DFR4A-H9T4 strikes a balance between speed and responsiveness. This latency value indicates the number of clock cycles required for the memory module to respond to a column address strobe command. Operating at a standard voltage of 1.5V, this memory module is suitable for a wide array of server platforms that support DDR3 RDIMMs, providing a reliable and efficient upgrade path for memory-intensive computing tasks.
Condition: Refurbished
Free U.S. ground shipping
Typically 1–2 days handling, 3–7 days in transit.
Purchase orders accepted
Government, enterprise, data center and small business.
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