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Hynix HMT42GR7BFR4A-H9T8AF 16GB DDR3-1333MHz RDIMM 2Rx4 CL9 Memory
- Capacity: 16GB
- Type: DDR3 SDRAM
- Speed: 1333MHz (PC3-10600R)
- Form Factor: DIMM
- Configuration: 2Rx4 (Dual Rank, x4 Data Width)
- Latency: CL9
- Type: Registered DIMM (RDIMM)
- ECC: Yes (Error-Correcting Code)
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Product Overview
The Hynix HMT42GR7BFR4A-H9T8AF is a 16GB DDR3-1333MHz Registered DIMM (RDIMM) memory module. It features a 2Rx4 configuration and CL9 latency, designed for server and workstation environments requiring high-capacity and reliable memory.
Technical Information
| Capacity | 16GB |
| Memory Type | DDR3 SDRAM |
| Speed | 1333MHz |
| Form Factor | DIMM |
Additional Specifications
| Module Type | RDIMM |
| Rank | 2Rx4 |
| CAS Latency | CL9 |
| ECC | Yes |
Product Description
This Hynix HMT42GR7BFR4A-H9T8AF memory module is a high-performance 16GB DDR3 Synchronous Dynamic Random-Access Memory (SDRAM) module designed for server and workstation applications. Operating at a speed of 1333MHz, it provides ample bandwidth for demanding computing tasks. The module is a Registered DIMM (RDIMM), which includes an onboard register to buffer command and address signals, reducing electrical load on the memory controller and allowing for higher memory capacities and improved signal integrity. The memory module features a 2Rx4 configuration, indicating it is dual-ranked with each rank utilizing x4 data width DRAM chips. This configuration can offer performance benefits in certain server workloads by allowing the memory controller to access different ranks concurrently. Furthermore, it supports Error-Correcting Code (ECC) functionality, which detects and corrects single-bit errors, enhancing system stability and data integrity – a critical feature for mission-critical server environments. With a CAS Latency (CL) of 9, this module strikes a balance between speed and timing. The PC3-10600R designation signifies its DDR3 standard and speed rating. This Hynix RDIMM is an ideal choice for upgrading or populating servers and workstations that require robust, high-capacity memory solutions capable of handling intensive multitasking and data processing.
