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Hynix HMT41GU7AFR8A-PBT0-AB 8GB DDR3-1600MHz UDIMM 2Rx8 CL11 Memory
- Capacity: 8GB
- Type: DDR3 UDIMM
- Speed: 1600MHz
- Rank: 2Rx8 (Dual Rank x8)
- CAS Latency: CL11
- Voltage: 1.5V (standard for DDR3)
- Form Factor: Unbuffered DIMM (UDIMM)
- Designed for servers and workstations
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Typically 1-2 handling + 3-7 transit days
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Product Overview
This Hynix memory module is an 8GB DDR3 UDIMM designed for high-performance computing. It operates at a speed of 1600MHz with a CAS latency of CL11, offering efficient data transfer for demanding applications.
Technical Information
| Memory Type | DDR3 SDRAM |
| Form Factor | UDIMM |
| Capacity | 8GB |
| Speed | 1600MHz |
Additional Specifications
| CAS Latency | CL11 |
| Rank | 2Rx8 |
| Voltage | 1.5V |
| ECC | Non-ECC |
Product Description
The Hynix HMT41GU7AFR8A-PBT0-AB is a high-quality 8GB DDR3 Unbuffered DIMM (UDIMM) memory module engineered for reliability and performance in a wide range of computing environments. With its 1600MHz clock speed, it ensures rapid data access, making it suitable for memory-intensive tasks and applications that require swift data processing. The 2Rx8 configuration signifies a dual-rank design with eight memory chips per rank, optimizing bandwidth and performance. This module operates with a CAS Latency (CL) of 11, indicating the number of clock cycles required to access data. This CL11 timing, combined with the DDR3 technology, provides a balanced performance profile for everyday computing, gaming, and professional workloads. The standard 1.5V operating voltage is typical for DDR3 modules, ensuring compatibility with a broad spectrum of motherboards and systems designed for this memory standard. As an UDIMM, this memory is unbuffered, meaning it has fewer internal registers compared to registered DIMMs (RDIMMs). This makes it ideal for standard desktop PCs, workstations, and some entry-level servers where maximum memory capacity per channel is not the primary concern. The HMT41GU7AFR8A-PBT0-AB is a reliable choice for upgrading existing systems or building new ones that demand efficient and stable memory performance.
