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Hynix HMT41GS6AFR8A-PBN0AB 8GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 204-Pin SODIMM 1.35V L...
- Capacity: 8GB
- Type: DDR3 SDRAM
- Form Factor: SODIMM (204-Pin)
- Speed: 1600MHz (PC3-12800)
- Latency: CL11
- Voltage: 1.35V (Low Voltage)
- ECC: Non-ECC
- Buffering: Unbuffered
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Product Overview
The Hynix HMT41GS6AFR8A-PBN0AB is an 8GB DDR3 Non-ECC Unbuffered SODIMM memory module. It operates at 1600MHz (PC3-12800) with CL11 latency and uses 1.35V.
Technical Information
| Manufacturer | Hynix |
| Part Number | HMT41GS6AFR8A-PBN0AB |
| Memory Type | DDR3 SDRAM |
| Capacity | 8GB |
| Speed | 1600MHz (PC3-12800) |
Additional Specifications
| Form Factor | 204-Pin SODIMM |
| ECC | Non-ECC |
| Buffering | Unbuffered |
| CAS Latency | CL11 |
| Voltage | 1.35V |
Product Description
The Hynix HMT41GS6AFR8A-PBN0AB is a high-quality 8GB memory module designed for systems that utilize DDR3 SODIMM form factors. This module operates at a speed of 1600MHz, corresponding to the PC3-12800 standard, and features a CAS Latency (CL) of 11. The 'PBN0' in the part number often indicates specific timings and configurations optimized for certain platforms. This particular module is Non-ECC (Error-Correcting Code) and Unbuffered, making it suitable for a wide range of consumer and some professional computing devices such as laptops, small form factor PCs, and certain servers or workstations that do not require ECC memory. The use of 1.35V signifies that it is a low-voltage module, contributing to reduced power consumption and heat generation, which is beneficial for mobile devices and energy-efficient systems. With its 204-pin SODIMM connector, this memory stick is designed for easy installation into compatible slots. It provides a significant boost in system performance by allowing the processor to access data more quickly, leading to improved multitasking capabilities and faster application loading times. Hynix is a reputable manufacturer known for producing reliable and high-performance memory components.
