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Hynix HMT351U7AFR8C-H9T0AA 4GB DDR3-1333MHz PC3-10600 ECC Unbuffered CL9 240-Pin DIMM Dual Rank Memo...
- 4GB DDR3 SDRAM capacity
- Speed: 1333MHz (PC3-10600)
- Latency: CL9
- ECC (Error-Correcting Code) functionality
- Unbuffered DIMM form factor
- Dual Rank design
- 240-Pin connector
- Designed for servers and workstations
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Product Overview
The Hynix HMT351U7AFR8C-H9T0AA is a 4GB DDR3-1333MHz ECC Unbuffered DIMM memory module. It operates at PC3-10600 speeds with CL9 latency, designed for servers and workstations requiring reliable and error-corrected memory.
Technical Information
| Capacity | 4GB |
| Memory Type | DDR3 SDRAM |
| Speed | 1333MHz (PC3-10600) |
| Latency | CL9 |
| ECC | Yes (Unbuffered) |
Additional Specifications
| Form Factor | DIMM |
| Pins | 240-Pin |
| Rank | Dual Rank |
| Voltage | Not Specified |
Product Description
The Hynix HMT351U7AFR8C-H9T0AA is a high-quality 4GB DDR3 Synchronous Dynamic Random-Access Memory (SDRAM) module designed for demanding computing environments. It operates at a clock speed of 1333MHz, corresponding to a PC3-10600 data rate, ensuring efficient data processing. The module features a CAS Latency (CL) of 9, which dictates the delay between the memory controller requesting data and the data becoming available, contributing to overall system responsiveness. This memory module incorporates ECC (Error-Correcting Code) technology, which is crucial for maintaining data integrity in mission-critical applications such as servers and workstations. ECC memory can detect and correct common types of internal data corruption, preventing system crashes and data loss. Furthermore, it is unbuffered, meaning that the data passes directly to the memory chip without an intermediate register, which can offer slight performance advantages in certain configurations and is standard for many server platforms. Built with a 240-pin DIMM form factor, the HMT351U7AFR8C-H9T0AA is compatible with motherboards that support DDR3 unbuffered ECC memory. Its Dual Rank design allows for increased memory bandwidth by enabling the memory controller to access different sets of memory chips independently. This combination of capacity, speed, ECC functionality, and form factor makes it a suitable upgrade or replacement component for systems requiring reliable and robust memory performance.


