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Hynix HMT325R7EFR8C-RD 2GB DDR3-1866MHz RDIMM 1Rx8 CL13 Memory
- 2GB DDR3 SDRAM capacity
- 1866MHz memory speed
- RDIMM (Registered DIMM) form factor
- 1Rx8 module configuration (single rank, 8-bit prefetch)
- CL13 CAS Latency
- Designed for server and workstation use
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Product Overview
The Hynix HMT325R7EFR8C-RD is a 2GB DDR3 Registered DIMM (RDIMM) memory module designed for server and workstation environments. It operates at a speed of 1866MHz with a CAS Latency of CL13, offering reliable performance for demanding applications.
Technical Information
| Memory Type | DDR3 SDRAM |
| Capacity | 2GB |
| Speed | 1866MHz |
| Form Factor | RDIMM |
Additional Specifications
| Rank | 1Rx8 |
| CAS Latency | CL13 |
| Voltage | 1.5V (typical) |
Product Description
This Hynix HMT325R7EFR8C-RD memory module is engineered to enhance the performance and responsiveness of server and high-end workstation systems. With its 2GB capacity and DDR3 technology, it provides a solid foundation for multitasking and running memory-intensive applications. The Registered DIMM (RDIMM) design incorporates a register chip that buffers command and address signals, reducing electrical load on the memory controller and allowing for higher memory capacities and improved stability in multi-module configurations. The module's 1866MHz clock speed ensures rapid data transfer rates, crucial for applications that require quick access to large datasets, such as virtualization, database management, and scientific computing. The 1Rx8 organization signifies a single rank of memory chips, each with an 8-bit data width, which is a common configuration for many server platforms. The CL13 latency rating indicates the number of clock cycles required to access data, contributing to the overall performance profile of the module. This specific Hynix memory is a component designed for integration into compatible server motherboards that support DDR3 RDIMMs. It adheres to industry standards for reliability and compatibility, making it a suitable choice for system upgrades or replacements where enhanced memory performance is desired. Its robust design is intended to meet the rigorous demands of continuous operation in enterprise environments.



