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Hynix HMT31GR7BFR4A-H9-B 8GB DDR3-1333MHz ECC REG CL9 RDIMM 1.35V
- 8GB DDR3 Memory Capacity
- 1333MHz Clock Speed
- ECC (Error-Correcting Code) Registered DIMM
- CL9 Latency
- 1.35V Low Voltage Operation
- Suitable for servers and workstations
- Ensures data integrity with ECC
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Typically 1-2 handling + 3-7 transit days
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For government, enterprise, data center, and small business customers.
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Product Overview
The Hynix HMT31GR7BFR4A-H9-B is an 8GB DDR3 Registered DIMM (RDIMM) memory module. It operates at 1333MHz with CL9 latency and uses 1.35V voltage. This ECC memory is designed for servers and workstations requiring reliable and high-performance memory.
Technical Information
| Memory Type | DDR3 SDRAM |
| Form Factor | RDIMM (Registered DIMM) |
| Capacity | 8 GB |
| Speed | 1333 MHz (PC3-10600) |
Additional Specifications
| CAS Latency | CL9 |
| Voltage | 1.35V |
| ECC | Yes |
| Rank | N/A (often implied by model, but not explicit here) |
Product Description
The Hynix HMT31GR7BFR4A-H9-B is a high-quality 8GB DDR3 Registered DIMM (RDIMM) memory module, engineered for demanding server and workstation environments. Operating at a speed of 1333MHz, it provides a significant performance boost for applications requiring fast data access and processing. The module features Error-Correcting Code (ECC) functionality, which is crucial for maintaining data integrity by detecting and correcting common types of memory errors, thereby enhancing system stability and reliability. This RDIMM operates with a CAS Latency (CL) of 9, indicating the number of clock cycles required to access a particular column of data. The module is designed for low-voltage operation at 1.35V, contributing to reduced power consumption and heat generation within densely populated server systems. This efficiency is vital for data centers aiming to optimize energy usage and operational costs. As a registered DIMM, the HMT31GR7BFR4A-H9-B includes onboard registers that buffer the address and command signals between the memory controller and the DRAM chips. This buffering reduces electrical load on the memory controller, allowing for more memory modules to be installed per channel and supporting higher memory capacities. It is an ideal choice for systems that require robust, stable, and high-performance memory solutions.
