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Hynix HMT112R7BFR8C-H9TB AA-C 1GB DDR3-1333MHz ECC REG CL9 RDIMM 1R
- Capacity: 1GB
- Type: DDR3 SDRAM
- Speed: 1333MHz (PC3-10600R)
- ECC (Error-Correcting Code) Registered DIMM (RDIMM).
- CAS Latency: CL9.
- Configuration: 1 Rank (1R).
- Designed for server and workstation applications requiring reliable memory.
- Ensures data integrity through error correction.
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Product Overview
This Hynix HMT112R7BFR8C-H9TB AA-C is a 1GB DDR3-1333MHz ECC Registered DIMM (RDIMM). It features CL9 latency and a single-rank (1R) configuration, designed for server and workstation memory upgrades.
Technical Information
| Manufacturer | Hynix |
| Part Number | HMT112R7BFR8C-H9TB AA-C |
| Capacity | 1GB |
| Type | DDR3 SDRAM |
| Speed | 1333MHz |
Additional Specifications
| Form Factor | RDIMM (Registered DIMM) |
| ECC | Yes |
| CAS Latency | CL9 |
| Rank | 1R |
Product Description
The Hynix HMT112R7BFR8C-H9TB AA-C is a 1GB DDR3 Synchronous Dynamic Random-Access Memory (SDRAM) module designed for high-performance computing environments. This module operates at a speed of 1333MHz, also known as PC3-10600R, providing efficient data transfer rates essential for demanding server and workstation applications. Its Registered DIMM (RDIMM) configuration helps reduce electrical load on the memory controller, allowing for higher memory capacities and improved stability in systems that support it. This memory module features Error-Correcting Code (ECC) functionality, which is crucial for maintaining data integrity in critical systems. ECC detects and corrects single-bit errors on the fly, preventing data corruption and system crashes that can occur with unbuffered memory. The CAS Latency (CL) is rated at 9, indicating the number of clock cycles required to access a particular column of data, and the single-rank (1R) design is standard for many server memory configurations. Ideal for upgrading or populating memory in compatible servers and workstations, the Hynix HMT112R7BFR8C-H9TB AA-C offers a reliable and stable memory solution. Its specifications make it suitable for a wide range of enterprise applications where uptime and data accuracy are paramount, ensuring that the system's memory subsystem performs optimally under various operating conditions.
