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Hynix HMCG94MEBRA108N 64GB DDR5-4800MHz RDIMM 2Rx4 CL40 Memory

Hynix HMCG94MEBRA108N 64GB DDR5-4800MHz RDIMM 2Rx4 CL40 Memory

SKU:HMCG94MEBRA108N
  • Capacity: 64GB
  • Memory Type: DDR5 SDRAM
  • Form Factor: RDIMM (Registered DIMM)
  • Speed: 4800MHz
  • CAS Latency: CL40
  • Rank: 2Rx4 (Dual Rank x4)
  • Voltage: 1.1V
  • ECC: Yes (Error-Correcting Code)
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List Price:$3,882.00Save $582.00
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Product Overview

This Hynix HMCG94MEBRA108N module is a 64GB DDR5 Registered DIMM (RDIMM) memory stick. It operates at a high speed of 4800MHz with a CAS Latency of 40, designed for high-capacity server and workstation applications. The 2Rx4 configuration indicates two ranks of memory chips, each with a 4-bit data width.

Technical Information

ManufacturerHynix
Part NumberHMCG94MEBRA108N
Memory Size64GB
Memory TechnologyDDR5 SDRAM
Memory Speed4800MHz

Additional Specifications

Module TypeRDIMM
Rank2Rx4
CAS LatencyCL40
Voltage1.1V

Product Description

The Hynix HMCG94MEBRA108N is a high-capacity 64GB DDR5 Registered DIMM (RDIMM), engineered to deliver superior performance and density for demanding server and workstation environments. DDR5 technology offers significant improvements in bandwidth and efficiency over previous generations. This module operates at a rapid 4800MHz frequency, providing the high throughput necessary for complex computations, large datasets, and intensive multitasking scenarios prevalent in modern data centers. As a Registered DIMM (RDIMM), it features an onboard register that buffers command and address signals, reducing the load on the memory controller. This design is crucial for enabling higher memory capacities and ensuring system stability, particularly in systems equipped with multiple memory modules. The 2Rx4 rank configuration indicates that the module comprises two ranks, with each rank having a 4-bit data interface per chip. This dual-rank design can offer performance advantages in certain server workloads by allowing for more efficient interleaving and access patterns. Operating at the standard DDR5 voltage of 1.1V, this module is designed for power efficiency. It also incorporates Error-Correcting Code (ECC) capabilities, which are essential for detecting and correcting memory errors, thereby ensuring data integrity and system reliability in mission-critical applications. The HMCG94MEBRA108N is a key component for building powerful, scalable, and reliable computing systems that require substantial memory resources.

Condition:Refurbished

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