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Hynix HMCG94AEBRA121N 64GB DDR5-4800MHz RDIMM 2Rx4 CL40 Memory
- Capacity: 64GB
- Type: DDR5 RDIMM (Registered DIMM)
- Speed: 4800MHz
- Latency: CL40
- Configuration: 2Rx4 (Dual Rank x4)
- Designed for servers and workstations
- High-performance memory module
- Supports advanced computing tasks
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Product Overview
The Hynix HMCG94AEBRA121N is a 64GB DDR5 RDIMM (Registered DIMM) memory module. It operates at a speed of 4800MHz with a CL40 latency and features a 2Rx4 configuration, designed for high-performance servers and workstations requiring advanced memory capabilities.
Technical Information
| Product Type | Memory Module |
| Capacity | 64GB |
| Memory Technology | DDR5 |
| Form Factor | RDIMM (Registered DIMM) |
| Speed | 4800MHz |
Additional Specifications
| CAS Latency | CL40 |
| Rank Configuration | 2Rx4 |
| Brand | Hynix |
| Part Number | HMCG94AEBRA121N |
Product Description
The Hynix HMCG94AEBRA121N is a high-capacity 64GB DDR5 Registered DIMM (RDIMM) memory module, engineered to deliver superior performance and reliability for demanding server and workstation environments. With its advanced DDR5 technology, it offers significantly increased bandwidth and improved power efficiency compared to previous generations of memory. Operating at a rapid 4800MHz frequency, this module provides the speed necessary to handle intensive applications, large datasets, and complex multitasking. The CL40 CAS latency, while higher than some lower-speed modules, is optimized for the DDR5 architecture, ensuring efficient data access. The 2Rx4 configuration indicates a dual-rank design with four data bits per DRAM chip, which can enhance performance by allowing the memory controller to access different ranks independently. As an RDIMM, it includes an on-module buffer that reduces electrical load on the memory controller, enabling higher memory capacities and greater stability in systems with many memory modules. This makes the HMCG94AEBRA121N an ideal choice for enterprise servers, high-performance computing, AI/ML workloads, and other applications where maximum memory performance and capacity are critical.
