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Hynix HMCG84AEBQA173N 32GB DDR5-4800MHz RDIMM 2Rx4 CL40 Memory
- Capacity: 32GB
- Type: DDR5 SDRAM
- Speed: 4800MHz
- Form Factor: RDIMM (Registered DIMM)
- Configuration: 2Rx4 (Dual Rank x4)
- Latency: CL40
- Brand: Hynix
- Part Number: HMCG84AEBQA173N
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Product Overview
This Hynix 32GB memory module is a DDR5-4800MHz RDIMM with a 2Rx4 configuration and CL40 latency. It is designed for next-generation servers and high-performance computing.
Technical Information
| SKU | HMCG84AEBQA173N |
| Title | Hynix HMCG84AEBQA173N 32GB DDR5-4800MHz RDIMM 2Rx4 CL40 Memory |
| Capacity | 32GB |
| Memory Type | DDR5 SDRAM |
| Speed | 4800MHz |
Additional Specifications
| Form Factor | RDIMM |
| Rank | 2Rx4 |
| Latency | CL40 |
| Brand | Hynix |
Product Description
The Hynix HMCG84AEBQA173N is a cutting-edge 32GB memory module engineered for the demands of modern server infrastructure and high-performance computing. It leverages the latest DDR5 SDRAM technology, offering significant advancements in speed, bandwidth, and power efficiency over previous generations. Operating at a blazing 4800MHz, this module provides exceptional data throughput, crucial for data-intensive applications, AI/ML workloads, and large-scale virtualization. This module is a Registered DIMM (RDIMM), featuring on-board registers that buffer command and address signals. This design enhances system stability and allows for higher memory capacities and densities, making it ideal for enterprise-grade servers. The 2Rx4 configuration signifies dual ranks, each composed of x4 data-wide DRAM chips, which can improve performance by enabling more parallel operations. The CAS Latency (CL) is rated at 40, a specification that, when considered alongside the high clock speed, defines the module's timing characteristics. Hynix, a globally recognized leader in semiconductor memory, produces this module to stringent quality standards. The HMCG84AEBQA173N is designed for compatibility with server platforms that support DDR5 RDIMMs, offering a substantial upgrade path for systems requiring increased memory capacity and performance. It represents a key component for building next-generation computing solutions that demand the utmost in memory speed and capability.



