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Hynix HMABAGL7ABR4N-XNT5 128GB DDR4-3200MHz LRDIMM 4Rx4 CL22 Memory
- 128GB DDR4 LRDIMM Memory Module
- Speed: 3200MHz
- CAS Latency: CL22
- Rank: 4Rx4
- ECC Registered (LRDIMM)
- Designed for servers and high-performance workstations
- High bandwidth and capacity for intensive workloads
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Product Overview
The Hynix HMABAGL7ABR4N-XNT5 is a high-capacity 128GB DDR4 LRDIMM memory module. It operates at a speed of 3200MHz with a CAS latency of 22, making it suitable for demanding server and workstation environments requiring significant memory bandwidth and capacity.
Technical Information
| Capacity | 128GB |
| Memory Type | DDR4 |
| Form Factor | LRDIMM |
| Speed | 3200MHz |
Additional Specifications
| CAS Latency | CL22 |
| Rank | 4Rx4 |
| Manufacturer | Hynix |
Product Description
The Hynix HMABAGL7ABR4N-XNT5 is a premium 128GB Load-Reduced Dual In-line Memory Module (LRDIMM) designed to meet the rigorous demands of enterprise-level computing. With its DDR4 technology, it offers significant improvements in speed and power efficiency over previous generations, making it an ideal choice for memory-intensive applications. The module's 3200MHz clock speed and CL22 latency provide exceptional data transfer rates, crucial for tasks such as large-scale data analysis, virtualization, and high-performance computing. The 4Rx4 configuration indicates a quad-rank design with four data banks per chip, further enhancing performance by allowing for more simultaneous memory accesses. As an LRDIMM, it incorporates a memory buffer chip that reduces electrical loading on the memory controller, enabling higher memory capacities and densities per channel. This Hynix memory is specifically engineered for server and workstation environments where reliability, capacity, and speed are paramount. Its robust design and high specifications ensure stable operation under heavy loads, supporting critical business operations and advanced research workloads. The ECC (Error-Correcting Code) functionality inherent in registered DIMMs helps detect and correct single-bit memory errors, enhancing system stability and data integrity.
