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Hynix HMAA8GR7CJR4N-XNT8 64GB DDR4-3200MHz RDIMM 2Rx4 CL22 Memory
- Capacity: 64GB
- Type: DDR4 RDIMM (Registered DIMM)
- Speed: 3200MHz
- Latency: CL22
- Configuration: 2Rx4 (Dual Rank x4)
- Voltage: Standard DDR4 voltage (typically 1.2V)
- ECC: Yes (Error-Correcting Code)
- Application: Server/Workstation
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Key specifications
See full specs ↓- Memory Type
- DDR4 SDRAM
- Form Factor
- RDIMM
- Capacity
- 64GB
- Speed
- 3200MHz
- CAS Latency
- CL22
- Rank
- 2Rx4
Product details
The Hynix HMAA8GR7CJR4N-XNT8 is a high-performance 64GB DDR4 RDIMM memory module designed for servers and workstations. It operates at a speed of 3200MHz with a CL22 latency, offering significant bandwidth for demanding applications. This module features a 2Rx4 rank configuration, indicating dual-rank operation with four data banks per rank, optimizing memory access efficiency.
Technical Information
| Memory Type | DDR4 SDRAM |
| Form Factor | RDIMM |
| Capacity | 64GB |
| Speed | 3200MHz |
Additional Specifications
| CAS Latency | CL22 |
| Rank | 2Rx4 |
| ECC | Yes |
| Voltage | 1.2V |
Description
This Hynix HMAA8GR7CJR4N-XNT8 memory module is engineered to meet the rigorous demands of enterprise-level computing environments. With a substantial 64GB capacity, it is ideal for memory-intensive tasks such as large database operations, virtualization, complex simulations, and high-performance computing. The DDR4 technology ensures faster data transfer rates compared to previous generations, while the RDIMM form factor provides registered buffering to enhance signal integrity and allow for higher memory capacities in systems. The module's 3200MHz clock speed translates to a theoretical peak bandwidth of 25.6 GB/s per module, significantly boosting system responsiveness and application performance. The CL22 latency, while slightly higher than lower-speed modules, is optimized for the 3200MHz frequency, providing a balanced performance profile. The 2Rx4 configuration signifies that the module contains two ranks of memory chips, with each rank having four internal memory banks. This dual-rank design can improve performance in certain scenarios by allowing the memory controller to access different ranks concurrently, effectively increasing the effective bandwidth. Furthermore, the inclusion of ECC (Error-Correcting Code) is crucial for server and workstation applications where data integrity is paramount. ECC memory can detect and correct single-bit errors on the fly, preventing data corruption and system crashes. This makes the HMAA8GR7CJR4N-XNT8 a reliable and robust choice for mission-critical systems that require continuous uptime and accurate data processing.
Condition: Refurbished
Free U.S. ground shipping
Typically 1–2 days handling, 3–7 days in transit.
Purchase orders accepted
Government, enterprise, data center and small business.
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