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Hynix HMAA4GU7AJR8N-VK 32GB DDR4-2666MHz UDIMM 2Rx8 CL19 Memory
- Capacity: 32GB
- Type: DDR4
- Form Factor: UDIMM (Unbuffered DIMM)
- Speed: 2666MHz (PC4-21300)
- CAS Latency: CL19
- Configuration: 2Rx8 (Dual Rank x8)
- Voltage: 1.2V
- ECC: Non-ECC (for UDIMM)
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Product Overview
The Hynix HMAA4GU7AJR8N-VK is a 32GB DDR4 UDIMM memory module, operating at 2666MHz with a CL19 latency. It features a 2Rx8 configuration, making it suitable for servers and high-performance workstations requiring significant memory capacity and speed.
Technical Information
| Brand | Hynix |
| Part Number | HMAA4GU7AJR8N-VK |
| Capacity | 32GB |
| Memory Type | DDR4 |
| Form Factor | UDIMM |
Additional Specifications
| Speed | 2666MHz |
| CAS Latency | CL19 |
| Rank | 2Rx8 |
| Voltage | 1.2V |
Product Description
The Hynix HMAA4GU7AJR8N-VK is a high-capacity 32GB DDR4 Unbuffered DIMM (UDIMM) memory module designed to enhance the performance of compatible computer systems. Operating at a speed of 2666MHz, it provides substantial bandwidth for data-intensive applications and multitasking, making it an ideal choice for servers, workstations, and high-performance desktops. This memory module features a 2Rx8 configuration, indicating it is dual-rank with each rank utilizing x8 DRAM chips. This configuration can offer performance benefits in certain scenarios by allowing the memory controller to access different ranks concurrently. With a CAS Latency (CL) of 19, it strikes a balance between speed and stability, suitable for a wide range of computing tasks. The module operates at a standard voltage of 1.2V, adhering to DDR4 power efficiency standards. As a non-ECC UDIMM, the Hynix HMAA4GU7AJR8N-VK is primarily intended for systems that do not require error-correcting code functionality, such as many consumer-grade desktops and some entry-level servers. Its substantial capacity and reliable performance make it a valuable upgrade for users seeking to improve system responsiveness, accelerate application loading times, and handle larger datasets more effectively.
