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Hynix HMA84GR7MFR4N-UHT2 32GB DDR4-2400MHz RDIMM 2Rx4 CL17 Memory

Hynix HMA84GR7MFR4N-UHT2 32GB DDR4-2400MHz RDIMM 2Rx4 CL17 Memory

SKU:HMA84GR7MFR4N-UHT2
  • 32GB capacity
  • DDR4 SDRAM technology
  • RDIMM (Registered DIMM) type
  • Speed: 2400MHz (PC4-19200)
  • Latency: CL17
  • Dual Rank (2Rx4)
  • ECC (Error-Correcting Code) support
  • Designed for servers
  • Voltage: 1.2V
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Product Overview

The Hynix HMA84GR7MFR4N-UHT2 is a 32GB DDR4 RDIMM memory module designed for servers. It operates at 2400MHz with a CL17 latency, offering high capacity and reliable performance.

Technical Information

ManufacturerHynix
Part NumberHMA84GR7MFR4N-UHT2
SKUHMA84GR7MFR4N-UHT2
Capacity32GB
Memory TypeDDR4 SDRAM
Form FactorRDIMM

Additional Specifications

Speed2400MHz
Module Rank2Rx4 (Dual Rank x4)
CAS LatencyCL17
ECCYes
Voltage1.2V

Product Description

The Hynix HMA84GR7MFR4N-UHT2 is a 32GB DDR4 Registered DIMM (RDIMM) memory module, intended for use in server systems. This module utilizes DDR4 technology, offering improvements in speed and power efficiency over previous generations. The RDIMM form factor includes onboard registers that help manage data flow, enabling higher memory densities and improved system stability, which are critical for server uptime. Operating at a frequency of 2400MHz (PC4-19200) with a CAS Latency (CL) of 17, this module provides substantial bandwidth for demanding server workloads. The 2Rx4 designation indicates it is a dual-rank module, meaning it has two independent sets of memory addresses, which can enhance performance in certain server configurations by allowing the memory controller to access different ranks simultaneously. As an ECC (Error-Correcting Code) memory module, it is equipped to detect and correct common memory errors, ensuring data integrity and system reliability. This is a fundamental requirement for mission-critical server applications where data accuracy and continuous operation are paramount. The standard operating voltage for DDR4 memory is 1.2V.

Condition:Refurbished

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