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Hynix HMA84GR7DJR4N-VKT3 32GB DDR4-2666MHz RDIMM 2Rx4 CL19 Memory
- 32GB DDR4 RDIMM Memory Module
- Speed: 2666MHz
- CAS Latency: CL19
- Configuration: 2Rx4 (Dual Rank, x4 organization)
- Voltage: Standard DDR4 voltage (typically 1.2V)
- ECC: Registered ECC (Error-Correcting Code)
- Form Factor: DIMM
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Product Overview
The Hynix HMA84GR7DJR4N-VKT3 is a 32GB DDR4 RDIMM memory module designed for high-performance computing environments. It operates at a speed of 2666MHz with a CAS latency of CL19, providing efficient data transfer for servers and workstations. This module features a 2Rx4 rank configuration, indicating dual-rank organization with four data banks per rank, optimizing memory access and bandwidth.
Technical Information
| Capacity | 32GB |
| Memory Type | DDR4 SDRAM |
| Form Factor | RDIMM |
| Speed | 2666MHz |
Additional Specifications
| CAS Latency | CL19 |
| Rank | 2Rx4 |
| ECC | Registered ECC |
Product Description
The Hynix HMA84GR7DJR4N-VKT3 is engineered to meet the demanding requirements of modern data centers and enterprise applications. Its 32GB capacity allows for substantial memory allocation, crucial for virtualization, large databases, and complex simulations. The DDR4 technology offers significant improvements in speed and power efficiency compared to previous generations, making it a cost-effective and high-performance solution. The 2666MHz clock speed, coupled with a CL19 latency, strikes a balance between responsiveness and throughput. The 2Rx4 configuration signifies a dual-rank design, where each rank is composed of DRAM chips with an x4 data width. This dual-rank architecture can enhance performance by allowing the memory controller to access different ranks concurrently, effectively increasing the memory bandwidth and reducing latency in certain access patterns. This is particularly beneficial in server environments where memory-intensive tasks are common. As a Registered DIMM (RDIMM), this module incorporates a register chip that buffers command and address signals between the memory controller and the DRAM chips. This buffering reduces electrical load on the memory controller, enabling higher memory capacities and speeds, and improving signal integrity. The inclusion of ECC functionality ensures data integrity by detecting and correcting single-bit errors, which is paramount for mission-critical applications where data accuracy is non-negotiable. This module is designed for compatibility with servers and workstations that support DDR4 RDIMMs.
