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Hynix HMA82GR8CJR8N-UH 16GB DDR4-2400MHz RDIMM 2Rx8 CL17 Memory
- Capacity: 16GB
- Type: DDR4 RDIMM
- Speed: 2400MHz
- Latency: CL17
- Configuration: 2Rx8 (Dual Rank x8)
- Voltage: 1.2V
- Form Factor: RDIMM (Registered DIMM)
- Application: Servers, workstations, enterprise environments
- ECC: Yes (Error-Correcting Code)
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Product Overview
This Hynix 16GB DDR4 RDIMM memory module operates at 2400MHz with a CL17 latency. It is designed for server and workstation environments, offering reliable performance and data integrity.
Technical Information
| Memory Type | DDR4 SDRAM |
| Form Factor | RDIMM |
| Capacity | 16GB |
| Speed | 2400MHz |
Additional Specifications
| CAS Latency | CL17 |
| Rank | 2Rx8 |
| Voltage | 1.2V |
| ECC | Yes |
Product Description
The Hynix HMA82GR8CJR8N-UH is a 16GB DDR4 Registered DIMM (RDIMM) memory module, engineered for robust performance in server and workstation environments. It operates at a frequency of 2400MHz with a CAS Latency (CL) of 17, providing efficient data throughput for demanding computing tasks. The RDIMM design incorporates a register chip that buffers command and address signals, reducing the electrical load on the memory controller and enabling support for larger memory capacities and improved signal integrity. This module features a 2Rx8 configuration, signifying it is dual-rank with eight memory chips per rank. Dual-rank modules can offer performance advantages in certain server workloads by allowing the memory controller to access data from different ranks concurrently, potentially improving efficiency. As an RDIMM, it inherently supports Error-Correcting Code (ECC) memory, which is critical for maintaining data accuracy and system stability in servers and workstations by detecting and correcting memory errors on the fly. Manufactured by Hynix, a reputable supplier of memory components, this 16GB DDR4 RDIMM is built for reliability and longevity. Its specifications make it a suitable choice for upgrading existing server memory or for populating new systems that require dependable, high-capacity, and error-corrected memory solutions for continuous operation and data integrity.



