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Hynix HMA82GR7DJR8N-WM 16GB DDR4-2933MHz RDIMM 2Rx8 CL21 Memory
- 16GB DDR4 Registered DIMM (RDIMM)
- Speed: 2933MHz
- Configuration: 2Rx8 (Dual Rank, x8)
- Latency: CL21
- Voltage: Standard DDR4 voltage
- Form Factor: Standard DIMM for servers and workstations
- ECC (Error-Correcting Code) support
- Part Number: HMA82GR7DJR8N-WM
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Product Overview
This Hynix 16GB DDR4 RDIMM memory module operates at 2933MHz, providing enhanced performance for servers and workstations. Designed with a 2Rx8 configuration and CL21 latency, it ensures efficient data handling and multitasking capabilities in demanding enterprise environments.
Technical Information
| Capacity | 16GB |
| Memory Type | DDR4 |
| Form Factor | RDIMM |
| Speed | 2933MHz |
Additional Specifications
| Rank | 2Rx8 |
| CAS Latency | CL21 |
| ECC | Yes (Registered ECC) |
Product Description
The Hynix HMA82GR7DJR8N-WM is a 16GB DDR4 Registered DIMM (RDIMM) memory module engineered for server and workstation applications where stability, capacity, and performance are critical. Operating at a speed of 2933MHz, this module significantly enhances data processing capabilities, making it suitable for memory-intensive tasks, virtualization, and large-scale data analysis. The module features a 2Rx8 organization, indicating it is dual-ranked with eight memory chips per rank. This configuration, combined with Registered ECC (Error-Correcting Code) functionality, helps to improve system stability and data integrity by detecting and correcting common memory errors. The CL21 CAS Latency offers a balance between speed and responsiveness for demanding server workloads. As an RDIMM, this memory module includes an onboard buffer chip that reduces electrical load on the memory controller, allowing for higher memory capacities and improved stability in systems with many memory modules installed. This makes it an ideal choice for enterprise-grade servers and high-performance workstations that require reliable and robust memory performance. The Hynix brand is synonymous with quality and reliability in the memory market.
