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Hynix HMA451R7MFR8N-TFTD 4GB DDR4-2133MHz RDIMM 1Rx8 CL15 Memory

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Hynix HMA451R7MFR8N-TFTD 4GB DDR4-2133MHz RDIMM 1Rx8 CL15 Memory

SKU HMA451R7MFR8N-TFTD
Brand Hynix
  • Capacity: 4GB
  • Type: DDR4 SDRAM
  • Form Factor: RDIMM (Registered DIMM)
  • Speed: 2133MHz (PC4-17000R)
  • CAS Latency: CL15
  • Rank: 1Rx8 (Single Rank x8)
  • Voltage: 1.2V
  • Designed for server and workstation applications.
  • ECC (Error-Correcting Code) support (inherent in RDIMMs).
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Key specifications

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Manufacturer
Hynix
Part Number
HMA451R7MFR8N-TFTD
Capacity
4GB
Memory Type
DDR4 SDRAM
Form Factor
RDIMM
Speed
2133MHz

Product details

The Hynix HMA451R7MFR8N-TFTD is a 4GB DDR4 RDIMM (Registered DIMM) memory module. It operates at 2133MHz with a CAS latency of 15, designed for servers and workstations requiring reliable and high-performance memory.

Technical Information

ManufacturerHynix
Part NumberHMA451R7MFR8N-TFTD
Capacity4GB
Memory TypeDDR4 SDRAM
Form FactorRDIMM

Additional Specifications

Speed2133MHz
CAS LatencyCL15
Rank1Rx8
Voltage1.2V

Description

The Hynix HMA451R7MFR8N-TFTD is a 4GB DDR4 Registered DIMM (RDIMM) memory module, engineered to provide enhanced performance and stability for server and workstation environments. DDR4 technology represents a significant advancement over previous DDR generations, offering higher speeds, lower power consumption, and increased bandwidth. This specific module operates at a frequency of 2133MHz, commonly referred to as PC4-17000R, ensuring efficient data transfer rates for demanding applications. The RDIMM form factor includes an onboard register chip that buffers the data between the memory controller and the DRAM modules. This buffering reduces electrical load on the memory controller, allowing for more memory modules to be installed per channel and improving overall system stability, especially in high-density memory configurations. Furthermore, RDIMMs inherently support ECC (Error-Correcting Code) functionality, which detects and corrects single-bit memory errors, crucial for maintaining data integrity in critical server operations. With a CAS Latency (CL) of 15 and a single-rank x8 organization (1Rx8), this module is optimized for efficient operation. The 1.2V operating voltage contributes to lower power consumption and heat generation compared to older DDR3 modules. This Hynix memory is a reliable choice for upgrading or populating memory in compatible servers and workstations that require robust, high-performance, and stable memory solutions.

Condition: Refurbished

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