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Hynix HMA42GR7BJR4N-UHT2 16GB DDR4-2400MHz RDIMM 2Rx4 CL17 Memory

Hynix HMA42GR7BJR4N-UHT2 16GB DDR4-2400MHz RDIMM 2Rx4 CL17 Memory

SKU:HMA42GR7BJR4N-UHT2
  • Capacity: 16GB
  • Type: DDR4 RDIMM
  • Speed: 2400MHz
  • CAS Latency: CL17
  • Configuration: 2Rx4 (Dual Rank x4)
  • Voltage: 1.2V
  • ECC: Yes (Registered ECC)
  • Form Factor: DIMM
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Product Overview

The Hynix HMA42GR7BJR4N-UHT2 is a 16GB DDR4 RDIMM memory module designed for servers and workstations. It operates at 2400MHz with a CAS latency of CL17, offering reliable performance for demanding applications. This module features a 2Rx4 configuration, indicating dual rank with four data bits per chip.

Technical Information

Memory TypeDDR4 SDRAM
Module TypeRDIMM (Registered DIMM)
Capacity16GB
Speed2400MHz

Additional Specifications

CAS LatencyCL17
Rank2Rx4
Voltage1.2V
Error CorrectionECC

Product Description

The Hynix HMA42GR7BJR4N-UHT2 is a 16GB DDR4 Registered DIMM (RDIMM) memory module, engineered for high-capacity and high-performance computing environments, particularly in servers and workstations. With a speed rating of 2400MHz and a CAS latency of CL17, it provides efficient data access and processing, crucial for memory-intensive applications such as virtualization, database management, and scientific simulations. The module's 2Rx4 configuration signifies that it is dual-rank, with each rank comprising memory chips organized as x4 (four data bits per chip). This architecture allows the memory controller to access different ranks independently, thereby increasing bandwidth and improving overall system performance. The RDIMM design includes a register chip that buffers command and address signals, reducing the electrical load on the memory controller and enabling higher memory capacities and improved stability in multi-module configurations. This Hynix memory module supports ECC (Error-Correcting Code) functionality, which is essential for maintaining data integrity in critical systems. ECC detects and corrects single-bit errors on the fly, preventing data corruption and system crashes. Operating at a standard DDR4 voltage of 1.2V, it also offers improved power efficiency compared to previous DDR generations, contributing to lower energy consumption in data centers and enterprise environments.

Condition:New

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