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HPE P43328-B21 32GB DDR5-4800MHz RDIMM 2Rx8 CL40 Memory
- Capacity: 32GB
- Type: DDR5
- Speed: 4800MHz
- Form Factor: RDIMM (Registered DIMM)
- Rank: 2Rx8 (Dual Rank x8)
- Latency: CL40
- Designed for HPE servers and workstations.
- Enhances system performance and responsiveness.
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Product Overview
The HPE P43328-B21 is a 32GB DDR5-4800MHz RDIMM memory module. It features a 2Rx8 rank configuration and CL40 latency, designed for high-performance computing environments.
Technical Information
| Memory Type | DDR5 SDRAM |
| Form Factor | RDIMM |
| Capacity | 32GB |
| Speed | 4800MHz |
| Rank | 2Rx8 |
Additional Specifications
| CAS Latency | CL40 |
| Voltage | N/A |
| Brand | HPE |
| SKU | P43328-B21 |
Product Description
The HPE P43328-B21 is a high-performance 32GB memory module engineered for modern server and workstation platforms that support DDR5 technology. Operating at a rapid speed of 4800MHz, this module significantly boosts system performance by enabling faster data access and processing. The Registered DIMM (RDIMM) form factor helps reduce electrical load on the memory controller, allowing for higher memory capacities and improved stability in densely populated memory configurations. This memory module features a 2Rx8 configuration, indicating it is dual-rank with each rank utilizing x8 data width DRAM chips. Dual-rank modules can offer performance advantages in certain scenarios by providing the memory controller with more banks to access concurrently. The CAS Latency (CL) of 40 signifies the number of clock cycles required to access a specific column in a row, which is a key factor in memory performance alongside speed and timings. Designed and tested for compatibility with HPE systems, the P43328-B21 ensures reliability and optimal performance. It is an ideal upgrade for servers and workstations requiring increased memory bandwidth and capacity to handle demanding applications such as large-scale data analysis, complex simulations, virtualization, and high-performance computing tasks. This DDR5 RDIMM represents the latest in memory technology, offering substantial improvements over previous generations.


