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HP 752370-091 32GB DDR4-2133MHz RDIMM 2Rx4 CL15 Memory

HP 752370-091 32GB DDR4-2133MHz RDIMM 2Rx4 CL15 Memory

SKU:752370-091
  • Capacity: 32GB
  • Memory Type: DDR4 SDRAM
  • Speed: 2133MHz (PC4-17000)
  • Form Factor: RDIMM (Registered DIMM)
  • Rank: 2Rx4 (Dual Rank x4)
  • Latency: CL15
  • ECC: Yes (Error-Correcting Code)
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List Price:$329.06Save $49.06
$280
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Details

Product Overview

The HP 752370-091 is a 32GB DDR4-2133MHz RDIMM memory module. It is designed for servers and high-performance workstations, offering increased capacity and speed for demanding applications. The module features a 2Rx4 rank configuration and CL15 latency.

Technical Information

Capacity32GB
Memory TypeDDR4 SDRAM
Speed2133MHz
Form FactorRDIMM

Additional Specifications

Rank2Rx4
LatencyCL15
ECCYes
Voltage1.2V

Product Description

The HP 752370-091 is a high-performance 32GB Registered DIMM (RDIMM) memory module engineered for enterprise-level computing environments, including servers and high-end workstations. This module utilizes DDR4 SDRAM technology, operating at a speed of 2133MHz, which translates to a bandwidth of PC4-17000. The increased capacity and speed are crucial for handling large datasets, running complex virtual machines, and accelerating demanding applications in data-intensive workloads. This specific module features a 2Rx4 rank configuration, indicating it is dual-rank with each rank utilizing x4 data width. This configuration can offer performance benefits in certain server workloads by allowing the memory controller to access different ranks concurrently, improving efficiency. Furthermore, it incorporates Error-Correcting Code (ECC) functionality, which detects and corrects single-bit errors on the fly, enhancing system stability and data integrity – a critical requirement for mission-critical applications and continuous operation. With a CAS Latency (CL) of 15, the HP 752370-091 strikes a balance between speed and responsiveness. The RDIMM form factor includes an onboard register that buffers command and address signals between the memory controller and the DRAM chips. This reduces electrical load on the memory controller, allowing for higher memory capacities and more memory modules per channel, making it suitable for systems requiring significant memory expansion. It operates at a standard voltage of 1.2V, adhering to DDR4 power efficiency standards.

Condition:Refurbished

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