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Dell A12627989 4GB DDR3-1333MHz RDIMM 2Rx4 CL9 Memory
- 4GB DDR3 RDIMM memory module.
- Operating speed: 1333MHz.
- Rank configuration: 2Rx4 (Dual Rank x4).
- Registered DIMM technology for stability.
- CAS Latency: CL9.
- Designed for Dell server and workstation platforms.
- Increases system memory capacity and performance.
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Product Overview
The Dell A12627989 is a 4GB DDR3 Registered DIMM (RDIMM) memory module. It operates at 1333MHz with a 2Rx4 configuration and CL9 latency, designed for Dell servers and workstations to enhance performance and capacity.
Technical Information
| Product Type | Memory Module |
| Brand | Dell |
| Part Number | A12627989 |
| Capacity | 4GB |
| Memory Technology | DDR3 |
Additional Specifications
| Form Factor | RDIMM |
| Speed | 1333MHz |
| Rank | 2Rx4 |
| CAS Latency | CL9 |
Product Description
The Dell A12627989 is a 4GB DDR3 memory module specifically designed to be compatible with Dell server and workstation systems. As a Registered DIMM (RDIMM), it features onboard registers that buffer command and address signals between the memory controller and the DRAM chips. This reduces the electrical load on the memory controller, allowing for more memory modules to be installed and improving overall system stability, especially in configurations with higher memory capacities. This module operates at a speed of 1333MHz, providing a good balance of performance and compatibility for many enterprise applications. The 2Rx4 rank configuration indicates a dual-rank design with four data bits per chip, which can offer performance benefits in certain memory access patterns. The CAS Latency of CL9 specifies the delay between the memory controller requesting data and the data becoming available, contributing to the module's responsiveness. By upgrading or expanding the memory with modules like the A12627989, users can significantly enhance the performance of their Dell systems. This is particularly beneficial for running multiple applications simultaneously, handling large datasets, virtualizing environments, and improving the overall speed and efficiency of memory-intensive tasks.
