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Dell A11927988 4GB DDR3-1333MHz RDIMM 2Rx4 CL9 Memory
- Capacity: 4GB
- Type: DDR3 SDRAM
- Form Factor: RDIMM (Registered DIMM)
- Speed: 1333MHz (PC3-10600)
- Rank: 2Rx4 (Dual Rank x4)
- Latency: CL9
- Voltage: Typically 1.5V
- ECC: Yes (Error-Correcting Code)
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Product Overview
This Dell A11927988 is a 4GB DDR3-1333MHz RDIMM memory module. It is designed for servers and workstations requiring reliable and efficient memory performance. The module features a 2Rx4 rank configuration and CL9 latency.
Technical Information
| Memory Type | DDR3 SDRAM |
| Capacity | 4GB |
| Speed | 1333MHz |
| Form Factor | RDIMM |
Additional Specifications
| Rank | 2Rx4 |
| CAS Latency | CL9 |
| ECC | Yes |
Product Description
The Dell A11927988 is a 4GB Registered Dual In-line Memory Module (RDIMM) operating at a speed of 1333MHz. This memory module is engineered for enterprise environments, providing enhanced stability and performance for demanding server and workstation applications. The 2Rx4 configuration signifies a dual-rank module where each rank consists of memory chips with an x4 data width, offering improved performance and density compared to single-rank modules in certain configurations. Designed to meet the rigorous demands of server hardware, this DDR3 RDIMM incorporates Error-Correcting Code (ECC) technology. ECC memory is capable of detecting and correcting single-bit errors in real-time, which is crucial for maintaining data integrity and preventing system crashes in mission-critical operations. The CL9 CAS Latency ensures timely data retrieval, contributing to the overall responsiveness of the memory subsystem and the system as a whole. This module is compatible with systems that support DDR3 RDIMMs operating at 1333MHz. The registered architecture helps to alleviate the electrical load on the memory controller, enabling higher memory capacities and improved signal integrity, especially in systems with multiple memory modules installed. It serves as an effective component for upgrading existing memory configurations or for populating new systems requiring reliable and efficient memory solutions.



