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ATP AL12P72B8BKK0M 4GB DDR3-1600MHz RDIMM 2Rx8 CL11 Memory
- 4GB DDR3 SDRAM Capacity
- 1600MHz Memory Speed (PC3-12800)
- Registered DIMM (RDIMM)
- ECC (Error-Correcting Code) Support
- Dual Rank (2Rx8)
- CAS Latency: CL11
- 1.5V Voltage
- Designed for Servers and Workstations
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Product Overview
The ATP AL12P72B8BKK0M is a 4GB DDR3 RDIMM (Registered DIMM) memory module. It operates at a speed of 1600MHz with CAS Latency 11 (CL11). This module is designed for servers and high-performance workstations requiring ECC support and registered memory for enhanced stability and performance.
Technical Information
| Memory Type | DDR3 SDRAM |
| Capacity | 4GB |
| Form Factor | RDIMM (Registered DIMM) |
| Speed | 1600MHz (PC3-12800) |
| CAS Latency | CL11 |
Additional Specifications
| Rank | 2Rx8 (Dual Rank, x8 Data Width) |
| ECC | Yes |
| Voltage | 1.5V |
| Module Height | Standard |
| Pin Count | 240-pin |
Product Description
The ATP AL12P72B8BKK0M is a 4GB DDR3 Registered DIMM (RDIMM) memory module designed to deliver enhanced performance and reliability in server and workstation environments. It operates at a higher frequency of 1600MHz, corresponding to the PC3-12800 standard, which allows for faster data transfer rates compared to lower-speed modules. This module includes Error-Correcting Code (ECC) capabilities, essential for maintaining data integrity and system stability in critical applications by detecting and correcting memory errors. The module is configured as Dual Rank (2Rx8), utilizing two ranks of memory chips, each with an x8 data width. This configuration can offer improved memory bandwidth and performance in systems that can leverage dual-rank modules effectively. The CAS Latency is set at CL11, which is typical for DDR3-1600 modules and provides a good balance between speed and timing. The standard operating voltage for this module is 1.5V, ensuring compatibility with most DDR3 server platforms. This 4GB DDR3 RDIMM is an excellent choice for upgrading existing server memory or for building new systems that require robust and high-speed memory solutions. Its combination of capacity, speed, ECC support, and registered architecture makes it suitable for running demanding applications, virtual machines, and large databases where memory performance and stability are critical.
