Safe Checkout
Secure Payments
Fast Delivery
Order Today
Free Shipping
Across the US
Easy Returns
Hassle-Free
Samsung MZ-ILS8000 800GB 12Gb/s SAS Multi-Level Cell 2.5-in SSD
- Capacity: 800GB
- Interface: 12Gb/s SAS
- Form Factor: 2.5-inch
- NAND Type: Multi-Level Cell (MLC)
- Enterprise-grade performance
- High reliability and endurance
Free U.S. Ground Shipping
Typically 1-2 handling + 3-7 transit days
Purchase orders accepted
For government, enterprise, data center, and small business customers.
Bulk Purchase Inquiry
Volume pricing and availability
Product Overview
The Samsung MZ-ILS8000 is an 800GB enterprise Solid State Drive featuring a 12Gb/s SAS interface and Multi-Level Cell (MLC) NAND flash. It is designed for high-performance, reliable storage in demanding server and data center environments.
Technical Information
| Capacity | 800GB |
| Interface | 12Gb/s SAS |
| Form Factor | 2.5-inch |
Additional Specifications
| NAND Flash Type | Multi-Level Cell (MLC) |
| Model Number | MZ-ILS8000 |
Product Description
This Samsung SSD, model MZ-ILS8000, is built to deliver exceptional performance and reliability for enterprise-level applications. The 12Gb/s SAS interface ensures rapid data transfer rates, crucial for I/O-intensive workloads such as databases, virtualization, and high-performance computing. Its 2.5-inch form factor allows for easy integration into standard server and storage systems. The drive utilizes Multi-Level Cell (MLC) NAND flash, providing a robust balance of performance, endurance, and cost efficiency for enterprise use cases. Samsung's advanced firmware and controller technology ensure consistent performance, data integrity, and extended drive lifespan through features like advanced wear leveling and error correction codes. With 800GB of storage, the MZ-ILS8000 is an excellent choice for organizations seeking to upgrade their storage infrastructure with a high-speed, dependable solution. It is designed to handle continuous operation and demanding workloads, contributing to improved application responsiveness and overall data center efficiency.
