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Samsung MZ-76E2T0E 2TB 6Gb/s SATA Multi-Level Cell 2.5-in SSD
- Capacity: 2TB
- Form Factor: 2.5-inch
- Interface: SATA III (6Gb/s)
- NAND Type: Multi-Level Cell (MLC)
- Optimized for speed and endurance
- Compatible with desktops and laptops
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Typically 1-2 handling + 3-7 transit days
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Product Overview
The Samsung MZ-76E2T0E is a 2TB 2.5-inch Solid State Drive featuring Multi-Level Cell (MLC) NAND flash and a 6Gb/s SATA interface. It is designed for enhanced performance and reliability in various computing applications.
Technical Information
| Capacity | 2TB |
| Form Factor | 2.5-inch |
| Interface | SATA III (6Gb/s) |
Additional Specifications
| NAND Type | MLC |
| Model | MZ-76E2T0E |
Product Description
The Samsung MZ-76E2T0E solid-state drive provides a generous 2TB capacity, offering ample storage for operating systems, applications, large media files, and extensive data libraries. Its standard 2.5-inch form factor ensures broad compatibility with a vast array of computing devices, including desktop computers, laptops, and workstations, making it a versatile upgrade or replacement option. The drive utilizes the SATA III interface, which operates at a maximum theoretical speed of 6Gb/s, delivering fast and efficient data transfer rates suitable for most everyday computing tasks and demanding applications. This SSD employs Multi-Level Cell (MLC) NAND flash memory. MLC NAND technology stores two bits of data per memory cell, offering a good balance between storage density, performance, and endurance compared to other NAND types like SLC and TLC. This makes the MZ-76E2T0E a reliable choice for users who need a drive that can handle frequent read and write operations without compromising longevity. It is engineered to provide consistent performance, ensuring that applications load quickly and files are accessed with minimal delay. Samsung has integrated advanced firmware and controller technology into the MZ-76E2T0E to optimize its performance and lifespan. Features such as wear leveling, garbage collection, and error correction code (ECC) are employed to distribute write operations evenly across the NAND flash, preventing premature wear and ensuring data integrity. This commitment to robust engineering results in a dependable storage solution that enhances the overall responsiveness and efficiency of any system it is installed in.



