Safe Checkout
Secure Payments
Fast Delivery
Order Today
Free Shipping
Across the US
Easy Returns
Hassle-Free
Samsung M378T6553CZ3-CD5-06 512MB DDR2-533MHz PC2-4200 Non-ECC Unbuffered CL4 240-Pin UDIMM 1.8V Sin...
- Capacity: 512MB
- Memory Type: DDR2 SDRAM
- Form Factor: UDIMM (Unbuffered DIMM)
- Speed: PC2-4200 (533MHz)
- Latency: CL4
- ECC: Non-ECC
- Voltage: 1.8V
- Pin Count: 240-Pin
Click on Inquire to get latest price
Free U.S. Ground Shipping
Typically 1-2 handling + 3-7 transit days
Purchase orders accepted
For government, enterprise, data center, and small business customers.
Bulk Purchase Inquiry
Volume pricing and availability
Product Overview
The Samsung M378T6553CZ3-CD5-06 is a 512MB DDR2 Non-ECC Unbuffered DIMM memory module. It operates at 533MHz (PC2-4200) with a CL4 latency, providing standard memory performance for compatible systems.
Technical Information
| Capacity | 512MB |
| Memory Type | DDR2 SDRAM |
| Form Factor | UDIMM |
| Speed | 533MHz (PC2-4200) |
Additional Specifications
| Latency | CL4 |
| ECC | Non-ECC |
| Voltage | 1.8V |
| Pin Count | 240-Pin |
Product Description
This Samsung memory module, SKU M378T6553CZ3-CD5-06, offers a 512MB capacity and utilizes DDR2 technology, making it suitable for older computer systems. As a Non-ECC Unbuffered DIMM (UDIMM), it is designed for standard desktop and entry-level server applications where advanced error correction is not required. The unbuffered nature means it directly interfaces with the memory controller without an intermediate buffer. The module operates at a speed of 533MHz, which corresponds to the PC2-4200 standard, and features a CAS Latency (CL) of 4. This combination provides adequate performance for systems of the DDR2 era, ensuring smooth operation for everyday computing tasks. The 1.8V operating voltage is standard for DDR2 memory modules. With its 240-pin configuration, the M378T6553CZ3-CD5-06 is physically compatible with DDR2 DIMM slots on motherboards. It serves as a reliable component for maintaining or upgrading older systems, providing essential memory capacity and performance characteristics for its intended use.
