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Samsung M378B5673FH0-CF806 2GB DDR3-1066MHz PC3-8500 Non-ECC Unbuffered CL7 240-Pin UDIMM 1.5V Dual ...
- Capacity: 2GB
- Type: DDR3 SDRAM
- Speed: 1066MHz (PC3-8500)
- Form Factor: 240-Pin UDIMM
- Voltage: 1.5V
- Features: Non-ECC, Unbuffered
- Latency: CL7
- Designed for desktop computers
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Product Overview
The Samsung M378B5673FH0-CF806 is a 2GB DDR3 SDRAM UDIMM module. It operates at PC3-8500 speeds (1066MHz) and is designed for non-ECC, unbuffered applications with a voltage of 1.5V.
Technical Information
| Capacity | 2GB |
| Memory Type | DDR3 SDRAM |
| Speed | 1066MHz |
| Module Type | UDIMM |
| Pin Count | 240-Pin |
Additional Specifications
| ECC | Non-ECC |
| Buffering | Unbuffered |
| Voltage | 1.5V |
| CAS Latency | CL7 |
Product Description
The Samsung M378B5673FH0-CF806 is a 2GB Unbuffered Dual In-line Memory Module (UDIMM) based on DDR3 SDRAM technology. This module is designed for standard desktop computer systems and operates at a frequency of 1066MHz, corresponding to the PC3-8500 specification, which signifies a theoretical data transfer rate of 8500 MB/s. DDR3 represents a significant advancement over DDR2, offering higher speeds and improved power efficiency, typically operating at a voltage of 1.5V. This module is Non-ECC (Non-Error-Correcting Code), meaning it lacks the built-in error detection and correction capabilities found in ECC memory modules. This makes it suitable for general-purpose computing environments like home PCs and standard office workstations, where the overhead of ECC is not required. As an unbuffered module (UDIMM), it communicates directly with the memory controller, which is common for consumer-grade motherboards. The module has a CAS Latency (CL) of 7, indicating the number of clock cycles required to access a specific column of data. A lower CL value generally implies faster response times. The 240-pin connector is standard for DDR3 UDIMMs. This Samsung memory module is intended for upgrading existing systems or building new ones that are compatible with DDR3 1066MHz memory, providing a capacity boost for multitasking and application performance.


