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Samsung M368L3223ETM-CCC-N 256MB DDR-400MHz PC3200 Non-ECC Unbuffered CL3 184-Pin UDIMM 2.5V Single ...
- Capacity: 256MB
- Memory Type: DDR SDRAM
- Speed: 400MHz (PC3200)
- Latency: CL3
- Form Factor: 184-Pin UDIMM
- Voltage: 2.5V
- ECC: Non-ECC
- Buffering: Unbuffered
- Manufacturer: Samsung
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Product Overview
The Samsung M368L3223ETM-CCC-N is a 256MB DDR SDRAM module operating at 400MHz (PC3200). It is a Non-ECC, Unbuffered UDIMM with a CL3 latency, designed for standard computing systems. This module provides reliable memory performance for compatible motherboards.
Technical Information
| SKU | M368L3223ETM-CCC-N |
| Product Type | RAM Module |
| Capacity | 256MB |
| Memory Type | DDR SDRAM |
| Speed | 400MHz |
| PC Speed Rating | PC3200 |
Additional Specifications
| CAS Latency | CL3 |
| Pin Count | 184-Pin |
| Form Factor | UDIMM |
| Voltage | 2.5V |
| ECC Support | Non-ECC |
| Buffering | Unbuffered |
Product Description
The Samsung M368L3223ETM-CCC-N is a 256 Megabyte (MB) DDR SDRAM module, engineered for enhanced performance in compatible computer systems. This module operates at a higher frequency of 400MHz, corresponding to the PC3200 standard, which allows for greater data throughput compared to lower-speed DDR modules. The increased speed makes it suitable for applications that benefit from faster memory access and processing capabilities. This memory module is specified as Non-ECC (Non-Error-Correcting Code) and Unbuffered. The Non-ECC designation means it lacks the circuitry to detect and correct memory errors, making it appropriate for standard desktop computers and workstations where the highest levels of data integrity are not paramount. The Unbuffered nature implies a direct communication path between the memory controller and the DRAM chips, potentially offering lower latency. Featuring a standard 184-pin UDIMM (Unbuffered Dual In-line Memory Module) form factor and operating at 2.5V, the M368L3223ETM-CCC-N is designed for straightforward installation in compatible motherboards. The CAS Latency (CL) of 3 indicates the number of clock cycles required to access a specific column address. This module serves as a reliable component for memory upgrades or replacements in systems that support DDR-400MHz memory.


