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Samsung M2U1G64DS8HB1G-5T 1Gb Ddr Cl-3 Unbuffered/Unregistered Non-Ecc Ddr-400 Pc-3200U 128Meg X 4 1...
- 1Gb DDR SDRAM component
- DDR-400 PC3200U speed
- CL-3 timings
- Unbuffered and Unregistered
- Non-ECC memory
- 128 Meg x 4 organization
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Product Overview
This Samsung memory module is a 1Gb DDR SDRAM component designed for high-speed computing. It operates at PC3200U speeds, equivalent to DDR-400, with CL-3 timings, offering unbuffered and unregistered performance.
Technical Information
| Memory Type | DDR SDRAM |
| Capacity | 1Gb |
| Speed | DDR-400 (PC3200U) |
| CAS Latency | CL-3 |
Additional Specifications
| Configuration | Unbuffered/Unregistered |
| Error Correction | Non-ECC |
| Organization | 128Meg x 4 |
Product Description
The Samsung M2U1G64DS8HB1G-5T is a high-performance memory module built with 1Gb DDR SDRAM technology. It is engineered for systems requiring unbuffered and unregistered memory, making it suitable for a wide range of consumer and some professional applications where ECC is not a requirement. The module operates at a speed of PC3200U, which corresponds to a clock speed of DDR-400, and features a CAS Latency (CL) of 3, ensuring rapid data access. This specific component is organized as 128 Megabytes by 4 bits, contributing to its overall capacity and bandwidth capabilities. The non-ECC nature of this module means it does not have built-in error correction, which is typical for standard desktop and laptop memory. Its design prioritizes speed and cost-effectiveness for general computing tasks. As a DDR-400 module, it adheres to the specifications of the DDR SDRAM standard, offering significant improvements in data transfer rates over previous generations. The unbuffered and unregistered design simplifies the memory controller's task and is commonly found in mainstream motherboards. This component is a reliable choice for upgrading or building systems that demand efficient and fast memory performance.



