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Micron MTFDKCB3T2TFC-1AZ1ZABYY 3.2TB PCI Express NVMe 4.0 x4 TLC SSD
- Capacity: 3.2TB
- Interface: PCI Express NVMe 4.0 x4
- Form Factor: U.2 (SFF-8639)
- NAND Type: Triple-Level Cell (TLC)
- Target Application: Data Center, Enterprise
- High IOPS for Random Read/Write
- Low Latency
- Designed for Demanding Workloads
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Product Overview
The Micron 3.2TB NVMe SSD (MTFDKCB3T2TFC-1AZ1ZABYY) is a high-performance enterprise solid-state drive designed for data-intensive applications. It utilizes the PCIe Gen4 x4 interface and NVMe protocol for rapid data access and transfer speeds.
Technical Information
| Capacity | 3.2TB |
| Interface | PCIe Gen4 x4 NVMe |
| Form Factor | U.2 (2.5-inch) |
| NAND Type | TLC |
| Protocol | NVMe 1.4 |
| Sequential Read | Up to 7,000 MB/s |
Additional Specifications
| Sequential Write | Up to 5,000 MB/s |
| Random Read (IOPS) | Up to 1,000,000 IOPS |
| Random Write (IOPS) | Up to 180,000 IOPS |
| Endurance (DWPD) | 1.0 DWPD (Drive Writes Per Day) |
| Power Consumption | Typical: 12W, Max: 16W |
Product Description
The Micron MTFDKCB3T2TFC-1AZ1ZABYY is a high-capacity, enterprise-grade solid-state drive designed to accelerate data-intensive workloads in data centers and high-performance computing environments. Featuring the latest PCI Express Gen4 x4 interface and the NVMe 1.4 protocol, this 3.2TB SSD offers significantly enhanced bandwidth and reduced latency compared to previous generations, making it ideal for applications requiring rapid data processing and analysis. This drive delivers exceptional performance metrics, including sequential read speeds of up to 7,000 MB/s and sequential write speeds of up to 5,000 MB/s. Its random read performance is outstanding, reaching up to 1,000,000 IOPS, which is critical for databases, virtualization, and other I/O-bound applications. The random write performance is also robust, peaking at 180,000 IOPS, ensuring efficient handling of transactional data. The U.2 form factor (2.5-inch) is standard for modern servers, facilitating easy integration into existing infrastructure. Built with advanced TLC NAND flash, the MTFDKCB3T2TFC-1AZ1ZABYY is engineered for reliability and endurance in demanding enterprise settings. It is rated for 1.0 Drive Writes Per Day (DWPD) over a 5-year period, providing a substantial lifespan for continuous operation. Features such as end-to-end data path protection and power loss protection are included to safeguard data integrity and ensure consistent operation, making it a dependable storage solution for mission-critical applications.
