MT8HTF6464AY-53EB7-06 - Micron Technology 512MB DDR2-533MHz PC2-4200 non-ECC Unbuffered CL4 240-Pin DIMM 1.8V Memory Module

Description

The Micron MT8HTF6464AY-53EB7-06 is a 512MB DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) module. This module is designed for use in systems that require DDR2 memory technology, offering a capacity suitable for basic computing tasks or as an upgrade for older workstations and servers. It operates at a frequency of 533MHz, which translates to a PC2-4200 data transfer rate, providing a moderate level of performance for its generation. This memory module features a CAS latency of CL4, indicating a relatively fast response time for memory operations. It is Non-ECC (Non-Error-Correcting Code) and Unbuffered, meaning it does not have built-in error checking capabilities and does not buffer data between the memory controller and the DRAM chips. This configuration is common in desktop and some server environments where the motherboard handles error correction or where the application does not require the overhead of ECC memory. The module adheres to the 240-pin UDIMM (Unbuffered DIMM) standard, which is characteristic of DDR2 memory. The MT8HTF6464AY-53EB7-06 operates at a standard voltage of 1.8V, consistent with DDR2 specifications. Its design prioritizes reliability and compatibility for systems that utilize DDR2 memory. While 512MB is a modest capacity by today's standards, this module remains relevant for maintaining or upgrading legacy systems that are not compatible with newer memory technologies. It is a component designed for specific hardware requirements, ensuring that older systems can continue to function effectively.

Condition: Refurbished