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Lenovo 5M30Z71767 16GB DDR5-4800MHz UDIMM 1Rx8 CL40 Memory
- 16GB memory capacity
- DDR5 SDRAM technology
- 4800MHz clock speed for high bandwidth
- Unbuffered DIMM (UDIMM) form factor
- 1Rx8 rank configuration
- CL40 latency
- Designed for desktop and workstation systems
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Product Overview
The Lenovo 5M30Z71767 is a 16GB DDR5-4800MHz UDIMM memory module. It features a 1Rx8 rank configuration and a CL40 latency, designed for high-performance computing systems. This module is suitable for upgrading or populating memory in compatible desktops and workstations.
Technical Information
| SKU | 5M30Z71767 |
| Brand | Lenovo |
| Type | DDR5 SDRAM |
| Capacity | 16GB |
Additional Specifications
| Speed | 4800MHz |
| Form Factor | UDIMM |
| Rank | 1Rx8 |
| CAS Latency | CL40 |
Product Description
The Lenovo 5M30Z71767 is a high-performance 16GB memory module engineered with the latest DDR5 SDRAM technology. Operating at a rapid 4800MHz clock speed, this module delivers significantly increased bandwidth compared to previous DDR generations, enabling faster data processing and improved system responsiveness. This makes it an ideal component for demanding applications, multitasking environments, and performance-critical workloads. This memory module utilizes the Unbuffered DIMM (UDIMM) form factor, which is standard for most desktop computers and workstations. The 1Rx8 rank configuration indicates a single rank with eight memory chips per rank, a common and efficient setup for DDR5 modules. Coupled with a CAS Latency (CL) of 40, it provides a balance between speed and timing, optimized for the DDR5 architecture. Designed as a direct upgrade or replacement for existing memory, the Lenovo 5M30Z71767 is intended for use in compatible Lenovo systems or other motherboards that support DDR5 UDIMM memory. Proper installation and compatibility verification with the system's motherboard and CPU are essential for optimal performance and stability. This module contributes to enhanced overall system performance, reducing load times and improving the efficiency of memory-intensive tasks.
