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Hynix HMT41GU6MFR8C-PBN0AA 8GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 240-Pin UDIMM Dual Ran...

Hynix HMT41GU6MFR8C-PBN0AA 8GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 240-Pin UDIMM Dual Ran...

SKU:HMT41GU6MFR8C-PBN0AA
  • Capacity: 8GB
  • Memory Type: DDR3
  • Speed: 1600MHz (PC3-12800)
  • Latency: CL11
  • Features: Non-ECC, Unbuffered, Dual Rank
  • Form Factor: 240-Pin UDIMM
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Details

Product Overview

This Hynix memory module provides 8GB of DDR3 RAM, operating at 1600MHz (PC3-12800). It is a non-ECC, unbuffered module with CL11 latency. The module uses a 240-pin UDIMM form factor and is dual rank, suitable for servers and workstations requiring high-capacity memory.

Technical Information

Capacity8GB
Memory TypeDDR3
Speed1600MHz
Module TypeUDIMM
ECCNon-ECC

Additional Specifications

BufferingUnbuffered
CAS LatencyCL11
RankDual Rank
Pin Count240-Pin

Product Description

The Hynix HMT41GU6MFR8C-PBN0AA is an 8GB memory module designed for high-performance computing environments, including servers and workstations. It operates on the DDR3 memory standard, delivering data at a speed of 1600MHz, identified by its PC3-12800 rating. This high bandwidth is essential for handling demanding applications and large datasets. This module is configured as Non-ECC (Non-Error-Correcting Code) and Unbuffered, ensuring compatibility with a wide range of server and workstation motherboards that do not require ECC functionality. The CAS Latency (CL) is rated at CL11, representing the timing for memory access. Its Dual Rank design allows the memory controller to access different banks of memory chips independently, potentially improving overall system throughput. With a standard 240-pin UDIMM (Unbuffered Dual In-line Memory Module) form factor, this module is designed for installation in standard DIMM slots. The HMT41GU6MFR8C-PBN0AA is a robust choice for users looking to upgrade their system's memory capacity and performance, providing a reliable foundation for intensive computing tasks.

Condition:Refurbished

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