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Hynix HMT351S6EFR8A-PBN0AB 4GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 204-Pin SODIMM 1.35V L...
- Memory Capacity: 4GB
- Memory Type: DDR3 SDRAM
- Speed: 1600MHz (PC3-12800)
- Form Factor: 204-Pin SODIMM
- Error Correction: Non-ECC
- Buffering: Unbuffered
- Voltage: 1.35V (Low Voltage)
- CAS Latency: CL11
HMT351S6EFR8A-PBN0AB isn't on our shelf today — we source it to order. Request a quote and we'll confirm price and lead time within one business day.
Key specifications
See full specs ↓- Memory Size
- 4 GB
- Memory Type
- DDR3 SDRAM
- Memory Speed
- 1600 MHz
- Module Type
- SODIMM
- Pins
- 204-Pin
- ECC Support
- Non-ECC
Product details
The Hynix HMT351S6EFR8A-PBN0AB is a 4GB DDR3 SDRAM module. It operates at a speed of 1600MHz (PC3-12800) and is unbuffered and non-ECC, making it suitable for general-purpose computing applications. The module features a 204-pin SODIMM form factor and operates at a low voltage of 1.35V.
Technical Information
| Memory Size | 4 GB |
| Memory Type | DDR3 SDRAM |
| Memory Speed | 1600 MHz |
| Module Type | SODIMM |
| Pins | 204-Pin |
Additional Specifications
| ECC Support | Non-ECC |
| Buffered | Unbuffered |
| Voltage | 1.35 V |
| CAS Latency | CL11 |
Description
The Hynix HMT351S6EFR8A-PBN0AB is a high-quality 4GB DDR3 Synchronous Dynamic Random-Access Memory (SDRAM) module designed for use in laptops and other small form-factor computing devices. It operates at a clock speed of 1600MHz, corresponding to a PC3-12800 data rate, providing efficient performance for multitasking and demanding applications. This module is unbuffered and non-Error Correcting Code (non-ECC), which are standard configurations for consumer-grade laptops and workstations where data integrity is managed by the CPU or operating system. The 204-pin SODIMM (Small Outline Dual In-line Memory Module) form factor is specifically designed for compatibility with the compact motherboards found in most portable computers. Operating at a reduced voltage of 1.35V (often referred to as DDR3L), this memory module offers improved power efficiency compared to standard DDR3 modules, contributing to longer battery life in laptops. With a CAS Latency (CL) of 11, it strikes a balance between speed and stability, making it a reliable choice for system upgrades or replacements.
Condition: Refurbished
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