Hynix HMT325S6EFR8A-PBN0AA 2GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 204-Pin SODIMM 1.35V L...

Product Description

The Hynix HMT325S6EFR8A-PBN0AA is a 2GB DDR3 Synchronous Dynamic Random-Access Memory (SDRAM) module designed for use in laptops and other compact computing devices. This module operates at a speed of 1600MHz, corresponding to the PC3-12800 standard, and utilizes the 204-pin SODIMM form factor, which is standard for most modern notebooks. The memory operates at a lower voltage of 1.35V, contributing to reduced power consumption and heat generation, which is beneficial for portable devices. This particular module is specified as non-ECC (Error-Correcting Code) and unbuffered. Non-ECC memory does not have built-in error detection and correction capabilities, making it suitable for consumer-grade devices where the cost and complexity of ECC are not required. Unbuffered memory means that the data signal is passed directly from the memory module to the memory controller without an intermediate buffer chip, which can offer slight performance advantages in certain configurations but is generally less robust than buffered memory. With a CAS Latency (CL) of 11, the HMT325S6EFR8A-PBN0AA offers a balance between speed and timing. This specification indicates the number of clock cycles required for the memory module to respond to a column address strobe command. This 2GB DDR3 SODIMM is a standard component for upgrading or replacing memory in compatible laptops, ensuring smooth multitasking and improved system responsiveness for everyday computing tasks.