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Hynix HMT125U6BFR8C-H9N0AA 2GB DDR3-1333MHz PC3-10600 non-ECC Unbuffered CL9 240-Pin UDIMM 1.35V Low...
- Capacity: 2GB
- Memory Type: DDR3 SDRAM
- Form Factor: UDIMM (Unbuffered DIMM)
- Speed: 1333MHz (PC3-10600)
- CAS Latency: CL9
- ECC: Non-ECC
- Buffering: Unbuffered
- Voltage: 1.35V (Low Voltage)
- Pin Count: 240-Pin
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Product Overview
This Hynix HMT125U6BFR8C-H9N0AA is a 2GB DDR3 UDIMM memory module. It operates at 1333MHz (PC3-10600) with a CAS latency of CL9. This module is non-ECC and unbuffered, designed for standard computing applications and features a low voltage operation of 1.35V.
Technical Information
| Capacity | 2GB |
| Memory Type | DDR3 SDRAM |
| Form Factor | UDIMM |
| Speed | 1333MHz |
| CAS Latency | CL9 |
Additional Specifications
| ECC | Non-ECC |
| Buffering | Unbuffered |
| Voltage | 1.35V |
| Pin Count | 240-Pin |
Product Description
The Hynix HMT125U6BFR8C-H9N0AA is a 2GB DDR3 Synchronous Dynamic Random-Access Memory (SDRAM) module. It is designed for use in desktop computers, workstations, and other systems that support DDR3 memory technology. Operating at a frequency of 1333MHz, it provides a data transfer rate of PC3-10600, offering a solid performance baseline for everyday computing tasks and moderate multitasking scenarios. The module is unbuffered and non-ECC, making it suitable for standard consumer-grade motherboards and chipsets. This particular module is specified with a CAS Latency (CL) of 9, indicating the number of clock cycles required to access a particular memory address. The low voltage operation at 1.35V is a key feature, aligning with the DDR3L standard, which contributes to reduced power consumption and heat generation compared to standard 1.5V DDR3 modules. This can be beneficial for systems where power efficiency is a consideration, such as in some compact form factor PCs or when aiming for a cooler operating environment. The 240-pin Unbuffered DIMM (UDIMM) form factor is standard for DDR3 memory modules intended for desktop and server applications. Hynix, a leading global manufacturer of semiconductors, ensures that this module meets industry standards for reliability and performance. It is a suitable replacement or upgrade component for systems requiring additional memory capacity within the DDR3 generation.
