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Hynix HMCG88MEBUA081NAA 32GB DDR5-4800MHz UDIMM 2Rx8 CL40 Memory
- 32GB Capacity
- DDR5 SDRAM Technology
- 4800MHz Clock Speed
- UDIMM (Unbuffered Dual In-line Memory Module) form factor
- 2 Ranks x 8 Banks (2Rx8) configuration
- CL40 CAS Latency
- Non-ECC Unbuffered memory
- Designed for servers and high-end workstations
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Product Overview
The Hynix HMCG88MEBUA081NAA is a 32GB DDR5 UDIMM memory module operating at 4800MHz with a CL40 latency. It is designed for high-performance computing applications.
Technical Information
| Capacity | 32GB |
| Memory Type | DDR5 SDRAM |
| Speed | 4800MHz |
| Form Factor | UDIMM |
Additional Specifications
| Rank | 2Rx8 |
| CAS Latency | CL40 |
| ECC | Non-ECC |
| Voltage | 1.1V |
Product Description
The Hynix HMCG88MEBUA081NAA is a high-capacity 32GB DDR5 Unbuffered Dual In-line Memory Module (UDIMM) engineered for demanding computing environments. It operates at a substantial 4800MHz frequency, providing exceptional bandwidth and performance crucial for data-intensive tasks, virtualization, and professional content creation. The DDR5 standard brings significant advancements, including improved power efficiency and enhanced signal integrity, enabling higher data rates and greater system stability. This module features a 2 Ranks x 8 Banks (2Rx8) configuration, offering increased density and potentially improved performance in systems that can leverage dual-rank memory. It has a CAS Latency (CL) of 40. While the latency figure is higher than previous DDR generations, the overall performance gains from DDR5's increased clock speeds and architectural enhancements are substantial. As a Non-ECC Unbuffered module, the HMCG88MEBUA081NAA is suitable for a wide range of desktop, workstation, and server applications where extreme data integrity protection is not the primary concern. Its 32GB capacity makes it ideal for users running memory-hungry applications or requiring extensive multitasking capabilities. This Hynix module is a key component for building or upgrading systems that demand cutting-edge memory performance and capacity.
