
Safe Checkout
Secure Payments
Fast Delivery
Order Today
Free Shipping
Across the US
Easy Returns
Hassle-Free
ATP AL12M72L8BKK0M 4GB DDR3-1600MHz RDIMM 2Rx8 CL11 Memory
- 4GB DDR3 SDRAM capacity
- Speed: 1600MHz (PC3-12800)
- Type: RDIMM (Registered DIMM)
- Configuration: 2Rx8 (Dual Rank, 8-bit)
- Latency: CL11 (CAS Latency 11)
- Voltage: Typically 1.5V for DDR3
- Designed for modern server and workstation platforms
- Offers higher bandwidth for demanding applications
- Supports efficient multitasking and data processing
Click on Inquire to get latest price
Free U.S. Ground Shipping
Typically 1-2 handling + 3-7 transit days
Purchase orders accepted
For government, enterprise, data center, and small business customers.
Bulk Purchase Inquiry
Volume pricing and availability
Product Overview
This ATP AL12M72L8BKK0M is a 4GB DDR3-1600MHz RDIMM (Registered Dual In-line Memory Module) with a 2Rx8 configuration and CL11 latency. It is designed for servers and workstations requiring high-speed memory performance.
Technical Information
| Memory Capacity | 4GB |
| Memory Type | DDR3 SDRAM |
| Form Factor | RDIMM |
| Speed | 1600MHz |
Additional Specifications
| Rank | 2Rx8 |
| CAS Latency | CL11 |
| Manufacturer | ATP |
| Part Number | AL12M72L8BKK0M |
Product Description
The ATP AL12M72L8BKK0M is a 4GB DDR3 Registered DIMM (RDIMM) module, engineered to deliver high-speed memory performance for server and workstation environments. Operating at a frequency of 1600MHz (PC3-12800), this module provides increased bandwidth compared to lower-speed DDR3 modules, which is crucial for applications that are memory-intensive. The RDIMM architecture includes an onboard register that buffers command and address signals, reducing the electrical load on the memory controller. This feature enhances system stability and allows for higher memory capacities, making it ideal for enterprise-grade systems. This module is configured as 2Rx8, meaning it is dual-rank with eight memory chips per rank. Dual-rank modules can offer performance advantages in certain server architectures by allowing the memory controller to access different ranks independently, potentially improving efficiency. The CAS Latency (CL) is rated at 11, indicating that it takes 11 clock cycles for the memory to respond to a column address strobe command. While CL11 is a higher latency number compared to some lower-speed modules, it is standard for DDR3-1600MHz operation and balances speed with stability. With its 4GB capacity, the AL12M72L8BKK0M is suitable for upgrading existing server infrastructure or for new builds requiring enhanced memory performance for tasks such as virtualization, database management, and complex data analysis. It is essential to confirm compatibility with the specific server or workstation motherboard, chipset, and CPU to ensure proper operation, as DDR3 RDIMMs are designed for particular hardware generations.


