#upgradetobetter

Home/Memory/Server Memory/ATP AL12M72B8BKKOS 4GB DDR3-1600MHz RDIMM 2Rx8 CL1...
ATP AL12M72B8BKKOS 4GB DDR3-1600MHz RDIMM 2Rx8 CL11 Memory

ATP AL12M72B8BKKOS 4GB DDR3-1600MHz RDIMM 2Rx8 CL11 Memory

SKU:AL12M72B8BKKOS
  • Capacity: 4GB
  • Type: DDR3 SDRAM
  • Form Factor: RDIMM (Registered DIMM)
  • Speed: 1600MHz (PC3-12800)
  • Configuration: 2Rx8 (Dual Rank, 8-bit)
  • Latency: CL11
  • Voltage: 1.5V
  • ECC: Yes (Error-Correcting Code)
  • Designed for servers and workstations
Get a Quick Price Quote

Click on Inquire to get latest price

Free U.S. Ground Shipping

Typically 1-2 handling + 3-7 transit days

Purchase orders accepted

For government, enterprise, data center, and small business customers.

Bulk Purchase Inquiry

Volume pricing and availability

Details

Product Overview

The ATP AL12M72B8BKKOS is a 4GB DDR3 RDIMM memory module. It operates at 1600MHz with a 2Rx8 configuration and CL11 latency, designed for server and workstation applications requiring reliable, high-performance RAM.

Technical Information

Memory Capacity4 GB
Memory TypeDDR3 SDRAM
Form FactorRDIMM

Additional Specifications

Speed1600 MHz
Rank2Rx8
CAS LatencyCL11

Product Description

The ATP AL12M72B8BKKOS is a 4GB Registered Dual In-line Memory Module (RDIMM) featuring DDR3 SDRAM technology. This module is engineered for demanding server and workstation environments, offering a blend of capacity, speed, and reliability. It operates at a clock speed of 1600MHz, corresponding to the PC3-12800 specification, which ensures high data transfer rates essential for multitasking and intensive computing tasks. The 2Rx8 configuration indicates a dual-rank design, where each rank comprises eight memory chips, optimizing performance by allowing for more parallel access to memory. This RDIMM is specified with a CAS latency (CL) of 11. This timing parameter, along with the 1600MHz frequency, defines the module's responsiveness. As a registered DIMM, it incorporates an onboard register that buffers command and address signals. This buffering reduces the electrical load on the system's memory controller, enabling support for larger memory capacities and improving overall system stability, particularly in systems populated with multiple memory modules. Crucially, the ATP AL12M72B8BKKOS includes Error-Correcting Code (ECC) capabilities. ECC memory is designed to detect and correct common types of memory errors in real-time, significantly enhancing data integrity and system reliability. This feature is indispensable for servers and critical workstations where data accuracy and uptime are paramount. The module operates at a standard voltage of 1.5V, consistent with DDR3 specifications. It is a suitable component for upgrading or configuring memory in compatible enterprise-grade systems.

Condition:Refurbished

Related Products

Loading Related Inventory...
ATP AL12M72B8BKKOS 4GB DDR3-1600MHz RDIMM 2Rx8 CL11 Memory | CoreRex