
Safe Checkout
Secure Payments
Fast Delivery
Order Today
Free Shipping
Across the US
Easy Returns
Hassle-Free
Samsung MZVLB1T0HBLR-00000 1TB Triple level Cell PCIeNVMe 7000 MB/s 5100 MB/s 1000K IOPS 850K IOPS M...
- Capacity: 1TB
- Form Factor: M.2
- Interface: PCIe NVMe
- NAND Type: Triple Level Cell (TLC)
- Sequential Read Speed: Up to 7000 MB/s
- Sequential Write Speed: Up to 5100 MB/s
- High IOPS for demanding workloads (1000K Read / 850K Write)
- Designed for high-performance computing and content creation
Click on Inquire to get latest price
Free U.S. Ground Shipping
Typically 1-2 handling + 3-7 transit days
Purchase orders accepted
For government, enterprise, data center, and small business customers.
Bulk Purchase Inquiry
Volume pricing and availability
Product Overview
The Samsung MZVLB1T0HBLR-00000 is a 1TB M.2 NVMe SSD featuring advanced performance metrics. It utilizes Triple-Level Cell (TLC) NAND and boasts sequential read speeds of up to 7000 MB/s and write speeds of up to 5100 MB/s, along with high IOPS for demanding tasks.
Technical Information
| Capacity | 1TB |
| Form Factor | M.2 |
| Interface | PCIe NVMe |
| NAND Type | TLC |
| Sequential Read Speed | 7000 MB/s |
Additional Specifications
| Sequential Write Speed | 5100 MB/s |
| IOPS (Read) | 1000K |
| IOPS (Write) | 850K |
| Model | MZVLB1T0HBLR-00000 |
Product Description
The Samsung MZVLB1T0HBLR-00000 represents a cutting-edge storage solution, delivering exceptional performance through its 1TB capacity and advanced NVMe interface. This M.2 form factor drive is engineered for speed, featuring blistering sequential read speeds of up to 7000 MB/s and sequential write speeds reaching 5100 MB/s. These figures indicate its capability to handle massive data transfers rapidly, making it ideal for tasks such as loading large games, editing high-resolution video, and working with complex datasets. Built with Triple-Level Cell (TLC) NAND flash memory, this SSD offers a robust combination of performance, endurance, and density. The NVMe protocol, coupled with a PCIe interface, minimizes latency and maximizes bandwidth, allowing the drive to achieve extremely high IOPS (Input/Output Operations Per Second) – up to 1000K for reads and 850K for writes. This translates to incredibly fast random access times, crucial for multitasking, running virtual machines, and accelerating application performance. This drive is targeted at power users, content creators, gamers, and professionals who demand the fastest possible storage performance. Its compact M.2 form factor ensures compatibility with a wide range of modern motherboards and laptops equipped with NVMe support. The Samsung MZVLB1T0HBLR-00000 is designed to significantly reduce bottlenecks associated with storage, providing a seamless and highly responsive computing experience.



